Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi; Tetsuya Mizumoto; Masafumi Shimizu; Takashi Waniishi; Naoki Futakuchi; Noriaki Kaida; Yoshiaki Nakano

doi:10.1143/jjap.38.4780

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

研究成果: Article › 査読

21 被引用数 (Scopus)

抄録

GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O₂ plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O₂ plasma and garnet crystals.

本文言語	English
ページ（範囲）	4780-4783
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	38
号	8 B
DOI	https://doi.org/10.1143/jjap.38.4780
出版ステータス	Published - 1999 8 15
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.38.4780

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引用スタイル

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals. / Yokoi, Hideki; Mizumoto, Tetsuya; Shimizu, Masafumi; Waniishi, Takashi; Futakuchi, Naoki; Kaida, Noriaki; Nakano, Yoshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4780-4783.

研究成果: Article › 査読

Yokoi, Hideki ; Mizumoto, Tetsuya ; Shimizu, Masafumi ; Waniishi, Takashi ; Futakuchi, Naoki ; Kaida, Noriaki ; Nakano, Yoshiaki. / Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1999 ; Vol. 38, No. 8 B. pp. 4780-4783.

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abstract = "GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.",

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AU - Waniishi, Takashi

AU - Futakuchi, Naoki

AU - Kaida, Noriaki

AU - Nakano, Yoshiaki

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AB - GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

KW - Contact angle

KW - Garnet crystals

KW - O plasma

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KW - Wafer direct bonding

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Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

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