抜粋
GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 4780-4783 |
| ページ数 | 4 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 38 |
| 発行部数 | 8 B |
| 出版物ステータス | Published - 1999 8 15 |
フィンガープリント
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
これを引用
Yokoi, H., Mizumoto, T., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1999). Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(8 B), 4780-4783.