Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi; Tetsuya Mizumoto; Masafumi Shimizu; Takashi Waniishi; Naoki Futakuchi; Noriaki Kaida; Yoshiaki Nakano

doi:10.1143/jjap.38.4780

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

研究成果: Article › 査読

22 被引用数 (Scopus)

抄録

GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O₂ plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O₂ plasma and garnet crystals.

本文言語	English
ページ（範囲）	4780-4783
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	38
号	8 B
DOI	https://doi.org/10.1143/jjap.38.4780
出版ステータス	Published - 1999 8月 15
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.38.4780

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title = "Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals",

abstract = "GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.",

keywords = "Contact angle, Garnet crystals, O plasma, Semiconductor, Wafer direct bonding",

author = "Hideki Yokoi and Tetsuya Mizumoto and Masafumi Shimizu and Takashi Waniishi and Naoki Futakuchi and Noriaki Kaida and Yoshiaki Nakano",

year = "1999",

month = aug,

day = "15",

doi = "10.1143/jjap.38.4780",

language = "English",

volume = "38",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Shimizu, Masafumi

AU - Waniishi, Takashi

AU - Futakuchi, Naoki

AU - Kaida, Noriaki

AU - Nakano, Yoshiaki

PY - 1999/8/15

Y1 - 1999/8/15

N2 - GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

AB - GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

KW - Contact angle

KW - Garnet crystals

KW - O plasma

KW - Semiconductor

KW - Wafer direct bonding

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U2 - 10.1143/jjap.38.4780

DO - 10.1143/jjap.38.4780

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VL - 38

SP - 4780

EP - 4783

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 B

ER -

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

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