Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

研究成果: Article

21 引用 (Scopus)

抄録

GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

元の言語English
ページ(範囲)4780-4783
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
発行部数8 B
出版物ステータスPublished - 1999 8 15
外部発表Yes

Fingerprint

Garnets
Angle measurement
garnets
Contact angle
wafers
Crystals
crystals
Plasmas
Hydrophilicity
Chemical activation
activation
estimates
water
Water

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals. / Yokoi, Hideki; Mizumoto, Tetsuya; Shimizu, Masafumi; Waniishi, Takashi; Futakuchi, Naoki; Kaida, Noriaki; Nakano, Yoshiaki.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 38, 番号 8 B, 15.08.1999, p. 4780-4783.

研究成果: Article

Yokoi, Hideki ; Mizumoto, Tetsuya ; Shimizu, Masafumi ; Waniishi, Takashi ; Futakuchi, Naoki ; Kaida, Noriaki ; Nakano, Yoshiaki. / Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals. :: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1999 ; 巻 38, 番号 8 B. pp. 4780-4783.
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AU - Waniishi, Takashi

AU - Futakuchi, Naoki

AU - Kaida, Noriaki

AU - Nakano, Yoshiaki

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