Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

研究成果: Article査読

21 被引用数 (Scopus)

抄録

GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals.

本文言語English
ページ(範囲)4780-4783
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
8 B
DOI
出版ステータスPublished - 1999 8 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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