Analysis of gate-lag phenomena in recessed-gate and buried-gate GaAs MESFETs

Akira Wakabayashi, Yasutaka Mitani, Kazushige Horio

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Two-dimensional analysis of gate-lag phenomena in recessed-gate and buried-gate GaAs MESFETs is performed, and their dependence on the structural parameters and the off-state gate voltage V Goff is studied. It is shown that when V Goff is around the threshold voltage (pinchoff voltage) V th, the gate-lag could be almost eliminated by introducing the buried-gate structure. However, it is suggested that large gate-lag might be seen when V Goff is much more negative than V th.

本文言語English
ページ(範囲)37-41
ページ数5
ジャーナルIEEE Transactions on Electron Devices
49
1
DOI
出版ステータスPublished - 2002 1 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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