Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs

Yoshiki Satoh, Hideyuki Hanawa, Atsushi Nakajima, Kazushige Horio

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We analyze breakdown characteristics and current collapse in AlGaN/GaN HEMTs, with the passivation layer's relative permittivity εr as a parameter. It is shown that the off-state breakdown voltage is considerably enhanced by introducing a high-k passivation layer because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. The breakdown voltage in the high-εr region increases when the gate voltage is changed from -8 to -10 V, because the buffer leakage current is reduced. It is also shown that drain lag and current collapse in AlGaN/GaN HEMTs could be reduced by introducing a high-k thick passivation layer, because the electric field at the drain edge of the gate is reduced, leading to less electron injection into the buffer layer and weaker buffer trapping effects.

本文言語English
論文番号031002
ジャーナルJapanese Journal of Applied Physics
54
3
DOI
出版ステータスPublished - 2015 3 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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