Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs

Yoshiki Satoh, Hideyuki Hanawa, Atsushi Nakajima, Kazushige Horio

研究成果: Article

4 引用 (Scopus)

抜粋

We analyze breakdown characteristics and current collapse in AlGaN/GaN HEMTs, with the passivation layer's relative permittivity εr as a parameter. It is shown that the off-state breakdown voltage is considerably enhanced by introducing a high-k passivation layer because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. The breakdown voltage in the high-εr region increases when the gate voltage is changed from -8 to -10 V, because the buffer leakage current is reduced. It is also shown that drain lag and current collapse in AlGaN/GaN HEMTs could be reduced by introducing a high-k thick passivation layer, because the electric field at the drain edge of the gate is reduced, leading to less electron injection into the buffer layer and weaker buffer trapping effects.

元の言語English
記事番号031002
ジャーナルJapanese Journal of Applied Physics
54
発行部数3
DOI
出版物ステータスPublished - 2015 3 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Analysis of high-k passivation-layer effects on buffer-related breakdown and current collapse in AlGaN/GaN HEMTs' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用