抄録
Two-dimensional simulation of backgating effect in a GaAs MESFET. is made in which impact ionization of carriers and deep donors “EL2” in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 277-279 |
| ページ数 | 3 |
| ジャーナル | IEEE Electron Device Letters |
| 巻 | 16 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 1995 6月 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学