Analysis of Kink-Related Backgating Effect in GaAs MESFET

Kazushige Horio, Kazuoki Usami

研究成果: Article

5 被引用数 (Scopus)

抄録

Two-dimensional simulation of backgating effect in a GaAs MESFET. is made in which impact ionization of carriers and deep donors “EL2” in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.

本文言語English
ページ(範囲)277-279
ページ数3
ジャーナルIEEE Electron Device Letters
16
6
DOI
出版ステータスPublished - 1995 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント 「Analysis of Kink-Related Backgating Effect in GaAs MESFET」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル