Two-dimensional simulation of backgating effect in a GaAs MESFET. is made in which impact ionization of carriers and deep donors “EL2” in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.
|ジャーナル||IEEE Electron Device Letters|
|出版ステータス||Published - 1995 6月|
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