Analysis of Kink-Related Backgating Effect in GaAs MESFET

Kazushige Horio, Kazuoki Usami

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Two-dimensional simulation of backgating effect in a GaAs MESFET. is made in which impact ionization of carriers and deep donors “EL2” in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating effect is discussed.

本文言語English
ページ(範囲)277-279
ページ数3
ジャーナルIEEE Electron Device Letters
16
6
DOI
出版ステータスPublished - 1995 6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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