Analysis of pulsed I-V curves and power slump in field-plate GaN-based FETs

Kazushige Horio, K. Itagaki, A. Nakajima

研究成果: Conference contribution

抜粋

Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer, and pulsed I-V curves are derived from them. It is studied how the existence of field plate affects buffer-related lag phenomena and power slump. It is shown that in both FETs, the power slump could be reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the power slump.

元の言語English
ホスト出版物のタイトル2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
ページ893-896
ページ数4
2
DOI
出版物ステータスPublished - 2008
イベント2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT - Nanjing
継続期間: 2008 4 212008 4 24

Other

Other2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
Nanjing
期間08/4/2108/4/24

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

これを引用

Horio, K., Itagaki, K., & Nakajima, A. (2008). Analysis of pulsed I-V curves and power slump in field-plate GaN-based FETs. : 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT (巻 2, pp. 893-896). [4540548] https://doi.org/10.1109/ICMMT.2008.4540548