Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.
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