Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

K. Horio; A. Wakabayashi; S. Otsuka; T. Yamada

Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

K. Horio, A. Wakabayashi, S. Otsuka, T. Yamada

研究成果: Paper › 査読

抄録

Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density N_EL2⁺ around the channel-substrate interface can be much higher than in the ON state.

本文言語	English
ページ	327-330
ページ数	4
出版ステータス	Published - 1999 1月 1
イベント	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA 継続期間: 1998 6月 1 → 1998 6月 5

Other

Other	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
City	Berkeley, CA, USA
Period	98/6/1 → 98/6/5

ASJC Scopus subject areas

工学（全般）

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author = "K. Horio and A. Wakabayashi and S. Otsuka and T. Yamada",

year = "1999",

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language = "English",

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note = "Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) ; Conference date: 01-06-1998 Through 05-06-1998",

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AU - Horio, K.

AU - Wakabayashi, A.

AU - Otsuka, S.

AU - Yamada, T.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.

AB - Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.

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T2 - Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)

Y2 - 1 June 1998 through 5 June 1998

ER -

Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

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