Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

K. Horio, A. Wakabayashi, S. Otsuka, T. Yamada

研究成果: Paper査読

抄録

Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.

本文言語English
ページ327-330
ページ数4
出版ステータスPublished - 1999 1 1
イベントProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA
継続期間: 1998 6 11998 6 5

Other

OtherProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
CityBerkeley, CA, USA
Period98/6/198/6/5

ASJC Scopus subject areas

  • 工学(全般)

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