Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors 'EL2' in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density NEL2+ around the channel-substrate interface can be much higher than in the ON state.
|出版ステータス||Published - 1999 1月 1|
|イベント||Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA|
継続期間: 1998 6月 1 → 1998 6月 5
|Other||Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)|
|City||Berkeley, CA, USA|
|Period||98/6/1 → 98/6/5|
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