Analysis of surface and substrate deep-trap effects on gate-lag phenomena in GaAs MESFETs

K. Horio, T. Yamada, A. Wakabayashi

研究成果: Paper

1 引用 (Scopus)

抜粋

This study theoretically demonstrates that the gate-lag in recessed-gate GaAs MESFETs may not be completely suppressed when the deep-acceptor-like surface state acts as a hole trap, because the thickness of surface depletion layer can change much by the applied gate voltage. Abnormal current overshoot arise due to deep traps in the substrate when the off-state gate voltage is deeply negative.

元の言語English
ページ101-103
ページ数3
出版物ステータスPublished - 1997 12 1
イベントProceedings of the 1997 GaAs Reliability Workshop - Anaheim, CA, USA
継続期間: 1997 10 121997 10 12

Other

OtherProceedings of the 1997 GaAs Reliability Workshop
Anaheim, CA, USA
期間97/10/1297/10/12

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

これを引用

Horio, K., Yamada, T., & Wakabayashi, A. (1997). Analysis of surface and substrate deep-trap effects on gate-lag phenomena in GaAs MESFETs. 101-103. 論文発表場所 Proceedings of the 1997 GaAs Reliability Workshop, Anaheim, CA, USA, .