Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.
|出版ステータス||Published - 1996 12月 1|
|イベント||Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA|
継続期間: 1996 11月 3 → 1996 11月 6
|Other||Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium|
|City||Orlando, FL, USA|
|Period||96/11/3 → 96/11/6|
ASJC Scopus subject areas