Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

K. Horio, T. Yamada

研究成果: Paper

2 引用 (Scopus)

抜粋

Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.

元の言語English
ページ175-178
ページ数4
出版物ステータスPublished - 1996 12 1
イベントProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
継続期間: 1996 11 31996 11 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
Orlando, FL, USA
期間96/11/396/11/6

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Horio, K., & Yamada, T. (1996). Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. 175-178. 論文発表場所 Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, .