抄録
Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.
| 本文言語 | English |
|---|---|
| ページ | 175-178 |
| ページ数 | 4 |
| 出版ステータス | Published - 1996 12月 1 |
| イベント | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA 継続期間: 1996 11月 3 → 1996 11月 6 |
Other
| Other | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium |
|---|---|
| City | Orlando, FL, USA |
| Period | 96/11/3 → 96/11/6 |
ASJC Scopus subject areas
- 電子工学および電気工学