Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

Kazushige Horio, T. Yamada

研究成果: Conference contribution

2 引用 (Scopus)

抄録

Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2-D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.

元の言語English
ホスト出版物のタイトルTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
編集者 Anon
出版場所Piscataway, NJ, United States
出版者IEEE
ページ175-178
ページ数4
出版物ステータスPublished - 1996
イベントProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
継続期間: 1996 11 31996 11 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
Orlando, FL, USA
期間96/11/396/11/6

Fingerprint

Surface states
Electron traps

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Horio, K., & Yamada, T. (1996). Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. : Anon (版), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 175-178). Piscataway, NJ, United States: IEEE.

Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. / Horio, Kazushige; Yamada, T.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 版 / Anon. Piscataway, NJ, United States : IEEE, 1996. p. 175-178.

研究成果: Conference contribution

Horio, K & Yamada, T 1996, Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. : Anon (版), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, Piscataway, NJ, United States, pp. 175-178, Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, 96/11/3.
Horio K, Yamada T. Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. : Anon, 編集者, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States: IEEE. 1996. p. 175-178
Horio, Kazushige ; Yamada, T. / Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 編集者 / Anon. Piscataway, NJ, United States : IEEE, 1996. pp. 175-178
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