Analysis of surface-related kink phenomena of GaAs MESFETs

K. Horio, A. Wakabayashi

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

Surface-state effects on kink or sub-breakdown phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to space-charge effects originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process. Substrate-related dynamic behavior including kink region is also analyzed.

元の言語English
ホスト出版物のタイトルTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
出版者IEEE
ページ167-170
ページ数4
ISBN(印刷物)0780355865
出版物ステータスPublished - 1999 12 1
イベントProceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, USA
継続期間: 1999 10 171999 10 20

出版物シリーズ

名前Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

OtherProceedings of the 199 21st Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
Monterey, CA, USA
期間99/10/1799/10/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Horio, K., & Wakabayashi, A. (1999). Analysis of surface-related kink phenomena of GaAs MESFETs. : Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 167-170). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). IEEE.