Analysis of trap-related kink dynamics in GaAs MESFETs

Kazushige Horio, A. Wakabayashi, Y. Mitani

研究成果: Conference contribution

抜粋

Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

元の言語English
ホスト出版物のタイトルIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
出版者Institute of Electrical and Electronics Engineers Inc.
ページ337-340
ページ数4
2000-January
ISBN(印刷物)0780358147
DOI
出版物ステータスPublished - 2000
イベント11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
継続期間: 2000 7 32000 7 7

Other

Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Australia
Canberra
期間00/7/300/7/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • これを引用

    Horio, K., Wakabayashi, A., & Mitani, Y. (2000). Analysis of trap-related kink dynamics in GaAs MESFETs. : IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (巻 2000-January, pp. 337-340). [939256] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIM.2000.939256