Angle dependent sputtering and dimer formation from vanadium nitride target by Ar+ ion bombardment

S. Kawaguchi, M. Kudo, M. Tanemura, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai

研究成果: Conference contribution

抜粋

A compact angle-resolved secondary ion mass spectrometer (AR-SIMS) with a special geometrical configuration, composing of a differentially pumped micro-beam ion-gun, a tillable sample stage and a time-of-flight (TOF) mass spectrometer was applied to measure angular distribution (AD) of secondary ions ejected from VN by oblique 3 keV Ar+ sputtering at room temperature. AD of V+ was almost identical with that of N+, strongly suggesting that Gibbsian segregation did not take place during sputtering. Since the angular dependence of VN Yv+ and V2 +/V+ intensity ratios was independent of that of N + and V+ intensities, VN+ and V 2+ dimer ions were generated via the "as such" direct emission process.

元の言語English
ホスト出版物のタイトルAICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials
出版者Trans Tech Publications
ページ607-610
ページ数4
ISBN(印刷物)0878499792, 9780878499793
出版物ステータスPublished - 2006
外部発表Yes
イベントAICAM 2005 - Asian International Conference on Advanced Materials - Beijing, China
継続期間: 2005 11 32005 11 5

出版物シリーズ

名前Advanced Materials Research
11-12
ISSN(印刷物)1022-6680

Conference

ConferenceAICAM 2005 - Asian International Conference on Advanced Materials
China
Beijing
期間05/11/305/11/5

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Kawaguchi, S., Kudo, M., Tanemura, M., Miao, L., Tanemura, S., Gotoh, Y., Liao, M., & Shinkai, S. (2006). Angle dependent sputtering and dimer formation from vanadium nitride target by Ar+ ion bombardment. : AICAM 2005 - Proceedings of the Asian International Conference on Advanced Materials (pp. 607-610). (Advanced Materials Research; 巻数 11-12). Trans Tech Publications.