抜粋
Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 4702-4704 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 82 |
| 発行部数 | 26 |
| DOI | |
| 出版物ステータス | Published - 2003 6 30 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
フィンガープリント Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Hao, M., Ishikawa, H., Egawa, T., Shao, C. L., & Jimbo, T. (2003). Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells. Applied Physics Letters, 82(26), 4702-4704. https://doi.org/10.1063/1.1588731