抄録
Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 4702-4704 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 82 |
| 号 | 26 |
| DOI | |
| 出版ステータス | Published - 2003 6月 30 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）