Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao, H. Ishikawa, T. Egawa, C. L. Shao, T. Jimbo

研究成果: Article

39 引用 (Scopus)

抜粋

Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

元の言語English
ページ(範囲)4702-4704
ページ数3
ジャーナルApplied Physics Letters
82
発行部数26
DOI
出版物ステータスPublished - 2003 6 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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