Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao, H. Ishikawa, T. Egawa, C. L. Shao, T. Jimbo

研究成果: Article査読

40 被引用数 (Scopus)

抄録

Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

本文言語English
ページ(範囲)4702-4704
ページ数3
ジャーナルApplied Physics Letters
82
26
DOI
出版ステータスPublished - 2003 6 30
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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