Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao; H. Ishikawa; T. Egawa; C. L. Shao; T. Jimbo

doi:10.1063/1.1588731

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao, H. Ishikawa, T. Egawa, C. L. Shao, T. Jimbo

研究成果: Article › 査読

40 被引用数 (Scopus)

抄録

Anomalous compositional pulling effect in InGAN/GaN multiple quantum wells (MQW) was analyzed. A series of InGaN/GaN MQWs was grown by metalorganic chemical vapor deposition (MOCVD) at the same conditions with different well width. The results showed that the In composition in these MQWs increases along the growth direction from the bottom to the top of each well layer.

本文言語	English
ページ（範囲）	4702-4704
ページ数	3
ジャーナル	Applied Physics Letters
巻	82
号	26
DOI	https://doi.org/10.1063/1.1588731
出版ステータス	Published - 2003 6 30
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.1588731

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引用スタイル

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AU - Jimbo, T.

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