Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack

T. Kawashima, K. S. Yew, Y. Zhou, D. S. Ang, H. Z. Zhang, Kentaro Kyuno

研究成果: Conference contribution

抜粋

Our study using conductive atomic force microscope shows that the resistive switching voltage in the SiO2/Cu stack is reduced by 33% after Ar plasma treatment of the oxide. Besides, the negative photo-conductivity (NPC) effect, normally observed on many locations following electrical soft-breakdown, is suppressed. The NPC effect arises because the electrically-formed filamentary conductive path, comprising both Cu and oxygen vacancies, may be disrupted by the recombination of the vacancies with nearby light-excited interstitial oxygen ions. Increase of the O-H peak, as seen from FT-IR spectroscopy, indicates that surface defects generated by the Ar plasma may have adsorbed water molecules, which in turn act as counter anions (OH-) accelerating Cu-ion diffusion into the oxide, forming a more complete Cu Filament that is non-responsive to light. The finding offers the possibility of both electrical and optical resistance control by a simple surface treatment step.

元の言語English
ホスト出版物のタイトルECS Transactions
編集者B. Magyari-Kope, G. Bersuker, K. Kobayashi, C. Hacker, J.G. Park, S. Shingubara, Y. Saito, Z. Karim, H. Shima, H. Kubota, Y.S. Obeng
出版者Electrochemical Society Inc.
ページ55-64
ページ数10
86
エディション3
ISBN(電子版)9781607685395
DOI
出版物ステータスPublished - 2018 1 1
イベントSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2018 9 302018 10 4

Other

OtherSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting
Mexico
Cancun
期間18/9/3018/10/4

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Kawashima, T., Yew, K. S., Zhou, Y., Ang, D. S., Zhang, H. Z., & Kyuno, K. (2018). Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack. : B. Magyari-Kope, G. Bersuker, K. Kobayashi, C. Hacker, J. G. Park, S. Shingubara, Y. Saito, Z. Karim, H. Shima, H. Kubota, & Y. S. Obeng (版), ECS Transactions (3 版, 巻 86, pp. 55-64). Electrochemical Society Inc.. https://doi.org/10.1149/08603.0055ecst