Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack

T. Kawashima, K. S. Yew, Y. Zhou, D. S. Ang, H. Z. Zhang, Kentaro Kyuno

研究成果: Conference contribution

抄録

Our study using conductive atomic force microscope shows that the resistive switching voltage in the SiO2/Cu stack is reduced by 33% after Ar plasma treatment of the oxide. Besides, the negative photo-conductivity (NPC) effect, normally observed on many locations following electrical soft-breakdown, is suppressed. The NPC effect arises because the electrically-formed filamentary conductive path, comprising both Cu and oxygen vacancies, may be disrupted by the recombination of the vacancies with nearby light-excited interstitial oxygen ions. Increase of the O-H peak, as seen from FT-IR spectroscopy, indicates that surface defects generated by the Ar plasma may have adsorbed water molecules, which in turn act as counter anions (OH-) accelerating Cu-ion diffusion into the oxide, forming a more complete Cu Filament that is non-responsive to light. The finding offers the possibility of both electrical and optical resistance control by a simple surface treatment step.

元の言語English
ホスト出版物のタイトルECS Transactions
編集者B. Magyari-Kope, G. Bersuker, K. Kobayashi, C. Hacker, J.G. Park, S. Shingubara, Y. Saito, Z. Karim, H. Shima, H. Kubota, Y.S. Obeng
出版者Electrochemical Society Inc.
ページ55-64
ページ数10
86
エディション3
ISBN(電子版)9781607685395
DOI
出版物ステータスPublished - 2018 1 1
イベントSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2018 9 302018 10 4

Other

OtherSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting
Mexico
Cancun
期間18/9/3018/10/4

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Plasmas
Data storage equipment
Oxides
Surface defects
Ions
Oxygen vacancies
Vacancies
Surface treatment
Infrared spectroscopy
Microscopes
Negative ions
Molecules
Oxygen
Electric potential
Water

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Kawashima, T., Yew, K. S., Zhou, Y., Ang, D. S., Zhang, H. Z., & Kyuno, K. (2018). Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack. : B. Magyari-Kope, G. Bersuker, K. Kobayashi, C. Hacker, J. G. Park, S. Shingubara, Y. Saito, Z. Karim, H. Shima, H. Kubota, ... Y. S. Obeng (版), ECS Transactions (3 版, 巻 86, pp. 55-64). Electrochemical Society Inc.. https://doi.org/10.1149/08603.0055ecst

Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack. / Kawashima, T.; Yew, K. S.; Zhou, Y.; Ang, D. S.; Zhang, H. Z.; Kyuno, Kentaro.

ECS Transactions. 版 / B. Magyari-Kope; G. Bersuker; K. Kobayashi; C. Hacker; J.G. Park; S. Shingubara; Y. Saito; Z. Karim; H. Shima; H. Kubota; Y.S. Obeng. 巻 86 3. 編 Electrochemical Society Inc., 2018. p. 55-64.

研究成果: Conference contribution

Kawashima, T, Yew, KS, Zhou, Y, Ang, DS, Zhang, HZ & Kyuno, K 2018, Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack. : B Magyari-Kope, G Bersuker, K Kobayashi, C Hacker, JG Park, S Shingubara, Y Saito, Z Karim, H Shima, H Kubota & YS Obeng (版), ECS Transactions. 3 Edn, 巻. 86, Electrochemical Society Inc., pp. 55-64, Symposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 18/9/30. https://doi.org/10.1149/08603.0055ecst
Kawashima T, Yew KS, Zhou Y, Ang DS, Zhang HZ, Kyuno K. Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack. : Magyari-Kope B, Bersuker G, Kobayashi K, Hacker C, Park JG, Shingubara S, Saito Y, Karim Z, Shima H, Kubota H, Obeng YS, 編集者, ECS Transactions. 3 版 巻 86. Electrochemical Society Inc. 2018. p. 55-64 https://doi.org/10.1149/08603.0055ecst
Kawashima, T. ; Yew, K. S. ; Zhou, Y. ; Ang, D. S. ; Zhang, H. Z. ; Kyuno, Kentaro. / Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack. ECS Transactions. 編集者 / B. Magyari-Kope ; G. Bersuker ; K. Kobayashi ; C. Hacker ; J.G. Park ; S. Shingubara ; Y. Saito ; Z. Karim ; H. Shima ; H. Kubota ; Y.S. Obeng. 巻 86 3. 版 Electrochemical Society Inc., 2018. pp. 55-64
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