Ar-plasma-modulated optical reset in the SiO2/Cu conductive-bridge resistive memory stack

T. Kawashima, K. S. Yew, Y. Zhou, D. S. Ang, H. Z. Zhang, K. Kyuno

研究成果: Conference contribution

抄録

Our study using conductive atomic force microscope shows that the resistive switching voltage in the SiO2/Cu stack is reduced by 33% after Ar plasma treatment of the oxide. Besides, the negative photo-conductivity (NPC) effect, normally observed on many locations following electrical soft-breakdown, is suppressed. The NPC effect arises because the electrically-formed filamentary conductive path, comprising both Cu and oxygen vacancies, may be disrupted by the recombination of the vacancies with nearby light-excited interstitial oxygen ions. Increase of the O-H peak, as seen from FT-IR spectroscopy, indicates that surface defects generated by the Ar plasma may have adsorbed water molecules, which in turn act as counter anions (OH-) accelerating Cu-ion diffusion into the oxide, forming a more complete Cu Filament that is non-responsive to light. The finding offers the possibility of both electrical and optical resistance control by a simple surface treatment step.

本文言語English
ホスト出版物のタイトルECS Transactions
編集者S. Shingubara, Z. Karim, K. Kobayashi, B. Magyari-Kope, H. Shima, Y. Saito, J.G. Park, G. Bersuker, H. Kubota, C. Hacker, Y.S. Obeng
出版社Electrochemical Society Inc.
ページ55-64
ページ数10
3
ISBN(印刷版)9781510871632
DOI
出版ステータスPublished - 2018
イベントSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2018 9 302018 10 4

出版物シリーズ

名前ECS Transactions
番号3
86
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

OtherSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting
国/地域Mexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • 工学(全般)

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