Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Hao Jiang, Naoyuki Nakata, Guang Yuan Zhao, Hiroyasu Ishikawa, Chun Lin Shao, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

研究成果: Article査読

38 被引用数 (Scopus)

抄録

Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.

本文言語English
ページ(範囲)L505-L507
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
40
5 B
DOI
出版ステータスPublished - 2001 5 15
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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