抄録
Back illuminated metal-semiconductor-metal photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The photodetector with a thin GaN layer of 0.3 μm exhibited low dark current with a saturation value of 2.06 pA. A visible rejection of more than four orders of magnitude was observed in the spectral responsivity under 5 μW/cm2 irradiance at 5 V bias. The responsivity was 16.5 A/W at a wavelength of 350 nm, which is 55 times that of the top illumination case. The results imply the presence of high internal gain under back illumination, due to the high density of charge generation.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L505-L507 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 40 |
| 号 | 5 B |
| DOI | |
| 出版ステータス | Published - 2001 5月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（その他）
- 物理学および天文学（全般）