抄録
A p+-GaN surface layer of 15 nm was incorporated in n-GaN Schottky photodiode to enhance the effective Schottky barrier height. A barrier height of 1.09eV for the normal n-GaN Schottky photodiode was increased to the effective barrier height of 1.16eV. The resulting photodiodes show a reverse dark current density of as low as 4.8 × 10-10 A/cm2 at -2V bias, which is about three orders of magnitude lower than that of the normal n-GaN Schottky photodiode. The lower dark current leads to a significant improvement in the visible rejection ratio. A peak responsivity of 107 mA/W was obtained at -2 V bias under the incident power density of 10μ,W/cm2, corresponding to an external quantum efficiency of 38%.
本文言語 | English |
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ページ(範囲) | 4101-4104 |
ページ数 | 4 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 43 |
号 | 7 A |
DOI | |
出版ステータス | Published - 2004 7月 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)