A p+-GaN surface layer of 15 nm was incorporated in n-GaN Schottky photodiode to enhance the effective Schottky barrier height. A barrier height of 1.09eV for the normal n-GaN Schottky photodiode was increased to the effective barrier height of 1.16eV. The resulting photodiodes show a reverse dark current density of as low as 4.8 × 10-10 A/cm2 at -2V bias, which is about three orders of magnitude lower than that of the normal n-GaN Schottky photodiode. The lower dark current leads to a significant improvement in the visible rejection ratio. A peak responsivity of 107 mA/W was obtained at -2 V bias under the incident power density of 10μ,W/cm2, corresponding to an external quantum efficiency of 38%.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2004 7月|
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