Barrier integrity of electroless diffusion barriers and organosilane monolayer against copper diffusion under bias temperature stress

Akiyoshi Mitsumori, Shota Fujishima, Kazuyoshi Ueno

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Barrier integrity of electroless NiB and CoWP/NiB thin layers against copper (Cu) diffusion was evaluated by time-dependent dielectric breakdown (TDDB) under bias temperature stress (BTS) using metal oxide semiconductor (MOS) test structures. The BTS tests were carried out also for an approximately 2.2-nm-thick organosilane monolayer (OSML), which has been used as the underlayer of the electroless barrier layers (EBLs). It was found that the barrier integrity of the EBLs was NiB 40 nm > NiB 10nm > CoWP/NiB 40 nm = CoWP/NiB 10 nm in this order. The field acceleration parameter of the TDDB lifetime was almost the same for all EBLs. Initial failures and wide lifetime distributions were observed for CoWP/NiB when the NiB catalyst layer for CoWP was not thick enough, which is considered to be due to the large surface roughness. In addition, the OSML was found to have some barrier properties. Although the reliability of OSML was inferior to electroless NiB and CoWP/NiB barrier layers, it is considered that the barrier integrity of the EBLs was partially supported by the OSML.

本文言語English
論文番号05EB03
ジャーナルJapanese Journal of Applied Physics
51
5 PART 2
DOI
出版ステータスPublished - 2012 5 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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