Behavior of Cu-In-Te electrodeposition from acid solution

Takahiro Ishizaki, Nagahiro Saito, Daisuke Yata, Akio Fuwa

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.

本文言語English
ホスト出版物のタイトルProceedings of the Second International Conference on Processing Materials for Properties
編集者B. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
ページ281-284
ページ数4
出版ステータスPublished - 2000 12 1
外部発表はい
イベントProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA, United States
継続期間: 2000 11 52000 11 8

出版物シリーズ

名前Proceedings of the Second International Conference on Processing Materials for Properties

Conference

ConferenceProceedings of the Second International Conference on Processing Materials for Properties
CountryUnited States
CitySan Francisco, CA
Period00/11/500/11/8

ASJC Scopus subject areas

  • Engineering(all)

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