Bromine doping of multilayer graphene for low-resistance interconnects

Kazuyoshi Ueno, Ryosuke Kosugi, Kazuya Imazeki, Akihiko Aozasa, Yuji Matsumoto, Hisao Miyazaki, Naoshi Sakuma, Akihiro Kajita, Tadashi Sakai

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Multilayer graphene (MLG) is expected to be a low-resistance and high-reliability interconnect material replacing copper (Cu) in nanoscale interconnects. To achieve low-resistance interconnect with MLG, carrier doping is necessary since the carrier concentrations in pristine MLGs are low. In this work, the effects of bromine (Br) doping by intercalation on the carrier concentration and sheet resistance of exfoliated highly oriented pyrolytic graphite (HOPG) were investigated by measuring the Fermi level shift using ultraviolet photoelectron spectroscopy (UPS) and the fourterminal method, respectively. The Fermi level was shifted downward up to 0.63 eV, and the sheet resistance was reduced to less than 10% of that of the pristine HOPG by increasing the Br concentration. A similar Fermi level shift was observed for the commercially available CVD-MLG. Br doping is thus promising for low-resistance MLG interconnects from the perspective of carrier doping.

本文言語English
論文番号05GC02
ジャーナルJapanese Journal of Applied Physics
53
5 SPEC. ISSUE 2
DOI
出版ステータスPublished - 2014 5月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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