Buffer-related gate lag in AlGaN/GaN HEMTs

Atsushi Nakajima, Kunitaka Fujii, Kazushige Horio

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Two-dimensional analysis of gate lag in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that relatively large gate lag can arise due to traps in the buffer layer. It is also shown that the buffer-related gate lag becomes smaller when the gate length becomes longer. Dependence of buffer-related gate lag on trap parameters such as a deep-acceptor density and a deep-donor's energy level is also studied.

本文言語English
ページ(範囲)1658-1660
ページ数3
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
9
7
DOI
出版ステータスPublished - 2012 7

ASJC Scopus subject areas

  • 凝縮系物理学

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