Buffer-trapping effects on current slump in AlGaN/GaN HEMTs

Atsushi Nakajima, Kazushige Horio

研究成果: Article

抄録

Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Calculated transient characteristics are compared between the two FETs, and it is shown that the deep levels affect the results essentially in a similar way. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

元の言語English
ページ(範囲)735-739
ページ数5
ジャーナルJournal of Materials Science: Materials in Electronics
19
発行部数8-9
DOI
出版物ステータスPublished - 2008 9

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High electron mobility transistors
high electron mobility transistors
Buffers
field effect transistors
buffers
trapping
Buffer layers
Field effect transistors
curves
high voltages
Electric potential
aluminum gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs. / Nakajima, Atsushi; Horio, Kazushige.

:: Journal of Materials Science: Materials in Electronics, 巻 19, 番号 8-9, 09.2008, p. 735-739.

研究成果: Article

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