Buffer-trapping effects on current slump in AlGaN/GaN HEMTs

Atsushi Nakajima, Kazushige Horio

研究成果: Article

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Two-dimensional transient analyses of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Calculated transient characteristics are compared between the two FETs, and it is shown that the deep levels affect the results essentially in a similar way. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

元の言語English
ページ(範囲)735-739
ページ数5
ジャーナルJournal of Materials Science: Materials in Electronics
19
発行部数8-9
DOI
出版物ステータスPublished - 2008 9

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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