Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing

Erika Maeda, Toshihide Nabatame, Kazuya Yuge, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Koji Shiozaki, Hajime Kiyono

研究成果: Article

抄録

We investigated the characteristics of n-GaN/Hf0.64Si0.36Ox/Pt MOS capacitors fabricated by post-deposition annealing (PDA) at 800 °C in O2 (PDO), N2 (PDN), and 3%H2 (PDH) ambients. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer (6.3 nm) at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. Furthermore, the n-GaN/Hf0.64Si0.36Ox/Pt MOS capacitors produced by PDN and PDH exhibited superior characteristics, such as a small flat-band voltage (Vfb) hysteresis of +50 mV and + 25 mV, a small Vfb shift of 0.74 V and − 0.06 V, high dielectric constants of 15.1 and 16.0, and high breakdown electric fields of 8.7 and 9.1 MV/cm, respectively. However, the PDH capacitor exhibited an order of magnitude larger Dit than the PDN capacitor, suggesting that a Ga2O3 intermediate layer at n-GaN/Hf0.64Si0.36Ox interface may be decomposed after PDH and results in significant Ga diffusion into the Hf0.64Si0.36Ox films and electrical defects generation at n-GaN/Hf0.64Si0.36Ox interface. These strongly indicate that the PDN process can produce superior Hf0.64Si0.36Ox films for use as gate dielectrics in GaN power devices.

元の言語English
記事番号111036
ジャーナルMicroelectronic Engineering
216
DOI
出版物ステータスPublished - 2019 8 15

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MOS capacitors
Gate dielectrics
capacitors
Annealing
annealing
Capacitors
Hysteresis
Permittivity
breakdown
hysteresis
Electric fields
permittivity
Defects
electric fields
shift
defects
Electric potential
electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

これを引用

Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing. / Maeda, Erika; Nabatame, Toshihide; Yuge, Kazuya; Hirose, Masafumi; Inoue, Mari; Ohi, Akihiko; Ikeda, Naoki; Shiozaki, Koji; Kiyono, Hajime.

:: Microelectronic Engineering, 巻 216, 111036, 15.08.2019.

研究成果: Article

Maeda, Erika ; Nabatame, Toshihide ; Yuge, Kazuya ; Hirose, Masafumi ; Inoue, Mari ; Ohi, Akihiko ; Ikeda, Naoki ; Shiozaki, Koji ; Kiyono, Hajime. / Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing. :: Microelectronic Engineering. 2019 ; 巻 216.
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title = "Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing",
abstract = "We investigated the characteristics of n-GaN/Hf0.64Si0.36Ox/Pt MOS capacitors fabricated by post-deposition annealing (PDA) at 800 °C in O2 (PDO), N2 (PDN), and 3{\%}H2 (PDH) ambients. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer (6.3 nm) at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. Furthermore, the n-GaN/Hf0.64Si0.36Ox/Pt MOS capacitors produced by PDN and PDH exhibited superior characteristics, such as a small flat-band voltage (Vfb) hysteresis of +50 mV and + 25 mV, a small Vfb shift of 0.74 V and − 0.06 V, high dielectric constants of 15.1 and 16.0, and high breakdown electric fields of 8.7 and 9.1 MV/cm, respectively. However, the PDH capacitor exhibited an order of magnitude larger Dit than the PDN capacitor, suggesting that a Ga2O3 intermediate layer at n-GaN/Hf0.64Si0.36Ox interface may be decomposed after PDH and results in significant Ga diffusion into the Hf0.64Si0.36Ox films and electrical defects generation at n-GaN/Hf0.64Si0.36Ox interface. These strongly indicate that the PDN process can produce superior Hf0.64Si0.36Ox films for use as gate dielectrics in GaN power devices.",
keywords = "GaN capacitor, HfSiO dielectric, HfO/SiO laminate, N annealing, Plasma-Enhanced ALD",
author = "Erika Maeda and Toshihide Nabatame and Kazuya Yuge and Masafumi Hirose and Mari Inoue and Akihiko Ohi and Naoki Ikeda and Koji Shiozaki and Hajime Kiyono",
year = "2019",
month = "8",
day = "15",
doi = "10.1016/j.mee.2019.111036",
language = "English",
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TY - JOUR

T1 - Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing

AU - Maeda, Erika

AU - Nabatame, Toshihide

AU - Yuge, Kazuya

AU - Hirose, Masafumi

AU - Inoue, Mari

AU - Ohi, Akihiko

AU - Ikeda, Naoki

AU - Shiozaki, Koji

AU - Kiyono, Hajime

PY - 2019/8/15

Y1 - 2019/8/15

N2 - We investigated the characteristics of n-GaN/Hf0.64Si0.36Ox/Pt MOS capacitors fabricated by post-deposition annealing (PDA) at 800 °C in O2 (PDO), N2 (PDN), and 3%H2 (PDH) ambients. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer (6.3 nm) at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. Furthermore, the n-GaN/Hf0.64Si0.36Ox/Pt MOS capacitors produced by PDN and PDH exhibited superior characteristics, such as a small flat-band voltage (Vfb) hysteresis of +50 mV and + 25 mV, a small Vfb shift of 0.74 V and − 0.06 V, high dielectric constants of 15.1 and 16.0, and high breakdown electric fields of 8.7 and 9.1 MV/cm, respectively. However, the PDH capacitor exhibited an order of magnitude larger Dit than the PDN capacitor, suggesting that a Ga2O3 intermediate layer at n-GaN/Hf0.64Si0.36Ox interface may be decomposed after PDH and results in significant Ga diffusion into the Hf0.64Si0.36Ox films and electrical defects generation at n-GaN/Hf0.64Si0.36Ox interface. These strongly indicate that the PDN process can produce superior Hf0.64Si0.36Ox films for use as gate dielectrics in GaN power devices.

AB - We investigated the characteristics of n-GaN/Hf0.64Si0.36Ox/Pt MOS capacitors fabricated by post-deposition annealing (PDA) at 800 °C in O2 (PDO), N2 (PDN), and 3%H2 (PDH) ambients. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer (6.3 nm) at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. Furthermore, the n-GaN/Hf0.64Si0.36Ox/Pt MOS capacitors produced by PDN and PDH exhibited superior characteristics, such as a small flat-band voltage (Vfb) hysteresis of +50 mV and + 25 mV, a small Vfb shift of 0.74 V and − 0.06 V, high dielectric constants of 15.1 and 16.0, and high breakdown electric fields of 8.7 and 9.1 MV/cm, respectively. However, the PDH capacitor exhibited an order of magnitude larger Dit than the PDN capacitor, suggesting that a Ga2O3 intermediate layer at n-GaN/Hf0.64Si0.36Ox interface may be decomposed after PDH and results in significant Ga diffusion into the Hf0.64Si0.36Ox films and electrical defects generation at n-GaN/Hf0.64Si0.36Ox interface. These strongly indicate that the PDN process can produce superior Hf0.64Si0.36Ox films for use as gate dielectrics in GaN power devices.

KW - GaN capacitor

KW - HfSiO dielectric

KW - HfO/SiO laminate

KW - N annealing

KW - Plasma-Enhanced ALD

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U2 - 10.1016/j.mee.2019.111036

DO - 10.1016/j.mee.2019.111036

M3 - Article

AN - SCOPUS:85066959176

VL - 216

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

M1 - 111036

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