Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3

Toshihide Nabatame, Ippei Yamamoto, Tomomi Sawada, Akihiko Ohi, Thang Duy Dao, Tomoji Ohishi, Tadaaki Nagao

研究成果: Conference contribution

抜粋

The electrical characteristics of rutile- and anatase-type TiO2 films were investigated by supplying alternatively pulses of trimethylaluminum (TMA) and H2O vapours after AI2O3 deposition using atomic layer deposition (ALD). As-grown rutile- and anatase-TiO2 films had an insulative property of ∼105ωcm, but its resistivity dropped dramatically to 10-1-10-2 ωcm and stayed low after supplying 5 cycles for ALD of AI2O3. The carrier density values of both TiO2 films were 1019-1020 cm-3 in the low-resistivity region. The Hall mobility values were 0.5-15 cm2V-1s-1, which correspond well with the literature values of 0.2-6 and 10 cm2V-1s-1 for thin-film and single-crystal anatase-TiO2, respectively. We propose one mechanism that oxygen vacancies must be formed by the reaction of adsorbed TMA precursor and the oxygen in TiO2 film after ALD-AI2O3 deposition and leads to electron generation, and results in change of resistivity from an insulative into a semiconductor characteristic.

元の言語English
ホスト出版物のタイトルAtomic Layer Deposition Applications 15
編集者Fred Roozeboom, Stefan De Gendt, Jolien Dendooven, Jeffrey W. Elam, Oscar van der Straten, Chanyuan Liu, Ganesh Sundaram, Andrea Illiberi
出版者Electrochemical Society Inc.
ページ15-21
ページ数7
エディション3
ISBN(電子版)9781607685395
DOI
出版物ステータスPublished - 2019 1 1
イベントInternational Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting - Atlanta, United States
継続期間: 2019 10 132019 10 17

出版物シリーズ

氏名ECS Transactions
番号3
92
ISSN(印刷物)1938-6737
ISSN(電子版)1938-5862

Conference

ConferenceInternational Symposium on Atomic Layer Deposition Applications 15 - 236th ECS Meeting
United States
Atlanta
期間19/10/1319/10/17

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Nabatame, T., Yamamoto, I., Sawada, T., Ohi, A., Dao, T. D., Ohishi, T., & Nagao, T. (2019). Change of electrical properties of rutile- and anatase-TiO2 films by atomic layer deposited Al2O3. : F. Roozeboom, S. De Gendt, J. Dendooven, J. W. Elam, O. van der Straten, C. Liu, G. Sundaram, ... A. Illiberi (版), Atomic Layer Deposition Applications 15 (3 版, pp. 15-21). (ECS Transactions; 巻 92, 番号 3). Electrochemical Society Inc.. https://doi.org/10.1149/09203.0015ecst