Changes in effective work function of HfxRu1-x alloy gate electrode

T. Nabatame, Y. Nunoshige, M. Kadoshima, H. Takaba, K. Segawa, S. Kimura, H. Satake, H. Ota, T. Ohishi, A. Toriumi

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Effective work function (φ{symbol}m,eff) values of Hfx Ru1-x alloy gate electrodes on SiO2 metal-oxide-semiconductor (MOS) capacitors were carefully examined to assess whether the φ{symbol}m,eff was determined by the crystalline structure or the composition of the HfxRu1-x alloy. X-ray diffraction results indicated that the crystalline structures of HfxRu1-x alloy were divided into hexagonal-Ru, cubic-HfRu or hexagonal-Hf with the increase of Hf content. The φ{symbol}m,eff values could be controlled continuously from 4.6 to 4.0 eV by changing the Hf content. The experimental φ{symbol}m,eff value showed a good agreement with theoretical results considering the compositional ratio of pure Hf and Ru. These results suggest that the φ{symbol}m,eff of HfxRu1-x alloy gates on SiO2 MOS capacitors is dominantly determined by the HfxRu1-x composition rather than the crystalline structure.

本文言語English
ページ(範囲)1524-1528
ページ数5
ジャーナルMicroelectronic Engineering
85
7
DOI
出版ステータスPublished - 2008 7 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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