Changes in effective work function of HfxRu1-x alloy gate electrode

T. Nabatame, Y. Nunoshige, M. Kadoshima, H. Takaba, K. Segawa, S. Kimura, H. Satake, H. Ota, Tomoji Ohishi, A. Toriumi

研究成果: Article

11 引用 (Scopus)

抄録

Effective work function (φ{symbol}m,eff) values of Hfx Ru1-x alloy gate electrodes on SiO2 metal-oxide-semiconductor (MOS) capacitors were carefully examined to assess whether the φ{symbol}m,eff was determined by the crystalline structure or the composition of the HfxRu1-x alloy. X-ray diffraction results indicated that the crystalline structures of HfxRu1-x alloy were divided into hexagonal-Ru, cubic-HfRu or hexagonal-Hf with the increase of Hf content. The φ{symbol}m,eff values could be controlled continuously from 4.6 to 4.0 eV by changing the Hf content. The experimental φ{symbol}m,eff value showed a good agreement with theoretical results considering the compositional ratio of pure Hf and Ru. These results suggest that the φ{symbol}m,eff of HfxRu1-x alloy gates on SiO2 MOS capacitors is dominantly determined by the HfxRu1-x composition rather than the crystalline structure.

元の言語English
ページ(範囲)1524-1528
ページ数5
ジャーナルMicroelectronic Engineering
85
発行部数7
DOI
出版物ステータスPublished - 2008 7

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Electrodes
electrodes
Crystalline materials
Capacitors
metal oxide semiconductors
Metals
capacitors
Chemical analysis
X ray diffraction
diffraction
x rays
Oxide semiconductors

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

これを引用

Nabatame, T., Nunoshige, Y., Kadoshima, M., Takaba, H., Segawa, K., Kimura, S., ... Toriumi, A. (2008). Changes in effective work function of HfxRu1-x alloy gate electrode. Microelectronic Engineering, 85(7), 1524-1528. https://doi.org/10.1016/j.mee.2008.02.008

Changes in effective work function of HfxRu1-x alloy gate electrode. / Nabatame, T.; Nunoshige, Y.; Kadoshima, M.; Takaba, H.; Segawa, K.; Kimura, S.; Satake, H.; Ota, H.; Ohishi, Tomoji; Toriumi, A.

:: Microelectronic Engineering, 巻 85, 番号 7, 07.2008, p. 1524-1528.

研究成果: Article

Nabatame, T, Nunoshige, Y, Kadoshima, M, Takaba, H, Segawa, K, Kimura, S, Satake, H, Ota, H, Ohishi, T & Toriumi, A 2008, 'Changes in effective work function of HfxRu1-x alloy gate electrode', Microelectronic Engineering, 巻. 85, 番号 7, pp. 1524-1528. https://doi.org/10.1016/j.mee.2008.02.008
Nabatame T, Nunoshige Y, Kadoshima M, Takaba H, Segawa K, Kimura S その他. Changes in effective work function of HfxRu1-x alloy gate electrode. Microelectronic Engineering. 2008 7;85(7):1524-1528. https://doi.org/10.1016/j.mee.2008.02.008
Nabatame, T. ; Nunoshige, Y. ; Kadoshima, M. ; Takaba, H. ; Segawa, K. ; Kimura, S. ; Satake, H. ; Ota, H. ; Ohishi, Tomoji ; Toriumi, A. / Changes in effective work function of HfxRu1-x alloy gate electrode. :: Microelectronic Engineering. 2008 ; 巻 85, 番号 7. pp. 1524-1528.
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