Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame T.Nabatame; Y.Nunoshige Y.Nunoshige; M.Kadoshima M.Kadoshima; H.Takaba H.Takaba; K.Segawa K.Segawa; S.Kimura S.Kimura; H.Satake H.Satake; H.Ota H.Ota; T.Ohishi T.Ohishi; A.Toriumi A.Toriumi; Tomoji Oishi

Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

T.Nabatame T.Nabatame, Y.Nunoshige Y.Nunoshige, M.Kadoshima M.Kadoshima, H.Takaba H.Takaba, K.Segawa K.Segawa, S.Kimura S.Kimura, H.Satake H.Satake, H.Ota H.Ota, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

地域環境システム専攻

研究成果 › 査読

本文言語	English
ジャーナル	Microelectronics Engineering
出版ステータス	Published - 2008 3月 28

引用スタイル

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title = "Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode",

author = "T.Nabatame T.Nabatame and Y.Nunoshige Y.Nunoshige and M.Kadoshima M.Kadoshima and H.Takaba H.Takaba and K.Segawa K.Segawa and S.Kimura S.Kimura and H.Satake H.Satake and H.Ota H.Ota and T.Ohishi T.Ohishi and A.Toriumi A.Toriumi and Tomoji Oishi",

year = "2008",

month = mar,

day = "28",

language = "English",

journal = "Microelectronics Engineering",

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TY - JOUR

T1 - Changes in Effective Work Function of HfxRu1-xAlloy Gate Electrode

AU - T.Nabatame, T.Nabatame

AU - Y.Nunoshige, Y.Nunoshige

AU - M.Kadoshima, M.Kadoshima

AU - H.Takaba, H.Takaba

AU - K.Segawa, K.Segawa

AU - S.Kimura, S.Kimura

AU - H.Satake, H.Satake

AU - H.Ota, H.Ota

AU - T.Ohishi, T.Ohishi

AU - A.Toriumi, A.Toriumi

AU - Oishi, Tomoji

PY - 2008/3/28

Y1 - 2008/3/28

M3 - Article

JO - Microelectronics Engineering

JF - Microelectronics Engineering

ER -