Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

T. Egawa; K. Nakamura; H. Ishikawa; T. Jimbo; M. Umeno

Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

T. Egawa, K. Nakamura, H. Ishikawa, T. Jimbo, M. Umeno

機能制御システム専攻

研究成果: Article › 査読

本文言語	English
ページ（範囲）	2630-2633
ジャーナル	Default journal
巻	38
出版ステータス	Published - 1999 4月 1

引用スタイル

@article{61d38156814943a58c7ce01c998c0c63,

title = "Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition",

author = "T. Egawa and K. Nakamura and H. Ishikawa and T. Jimbo and M. Umeno",

year = "1999",

month = apr,

day = "1",

language = "English",

volume = "38",

pages = "2630--2633",

journal = "Default journal",

}