Characteristics of BCl3 plasma-etched GaN Schottky diodes

Masaharu Nakaji, Takashi Egawa, Hiroyasu Ishikawa, Subramanian Arulkumaran, Takashi Jimbo

研究成果: Letter

14 引用 (Scopus)

抜粋

Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

元の言語English
ページ(範囲)L493-L495
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
41
発行部数4
出版物ステータスPublished - 2002 4 15

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

これを引用

Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S., & Jimbo, T. (2002). Characteristics of BCl3 plasma-etched GaN Schottky diodes. Japanese Journal of Applied Physics, Part 2: Letters, 41(4), L493-L495.