Characteristics of BCl3 plasma-etched GaN Schottky diodes

Masaharu Nakaji, Takashi Egawa, Hiroyasu Ishikawa, Subramanian Arulkumaran, Takashi Jimbo

研究成果: Letter査読

20 被引用数 (Scopus)

抄録

Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.

本文言語English
ページ(範囲)L493-L495
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
41
4
DOI
出版ステータスPublished - 2002 4月 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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