Schottky diode characteristics of a boron trichloride (BCl3) plasma-etched n-GaN layer by reactive ion etching (RIE) were investigated using current-voltage measurements. BCl3 plasma etching degraded the Schottky diode characteristics due to plasma-induced damage and a discharge-gas-related residue near the surface of the GaN layer. To remove the residue and plasma damage from the GaN layer, various surface treatments were carried out on the BCl3 plasma-etched GaN layer. Improved Schottky characteristics were observed in nitrogen plasma-treated n-GaN Schottky diodes. X-ray photoelectron spectroscopy confirmed the removal of the discharge-gas-related residue.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 2002 4月 15|
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