TY - JOUR
T1 - Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD
AU - Egawa, T.
AU - Ishikawa, H.
AU - Yamamoto, K.
AU - Jimbo, T.
AU - Umeno, M.
PY - 1997
Y1 - 1997
N2 - A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.
AB - A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.
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U2 - 10.1557/proc-482-1101
DO - 10.1557/proc-482-1101
M3 - Conference article
AN - SCOPUS:0031345068
VL - 482
SP - 1101
EP - 1106
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
T2 - Proceedings of the 1997 MRS Fall Meeting
Y2 - 1 December 1997 through 4 December 1997
ER -