Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

T. Egawa, Hiroyasu Ishikawa, K. Yamamoto, T. Jimbo, M. Umeno

研究成果: Conference contribution

1 引用 (Scopus)

抄録

A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者S.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
出版者MRS
ページ1101-1106
ページ数6
482
出版物ステータスPublished - 1997
外部発表Yes
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 12 11997 12 4

Other

OtherProceedings of the 1997 MRS Fall Meeting
Boston, MA, USA
期間97/12/197/12/4

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Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Diodes
Transconductance
Substrates
Current voltage characteristics
Crystalline materials
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Egawa, T., Ishikawa, H., Yamamoto, K., Jimbo, T., & Umeno, M. (1997). Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. : S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (版), Materials Research Society Symposium - Proceedings (巻 482, pp. 1101-1106). MRS.

Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. / Egawa, T.; Ishikawa, Hiroyasu; Yamamoto, K.; Jimbo, T.; Umeno, M.

Materials Research Society Symposium - Proceedings. 版 / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. 巻 482 MRS, 1997. p. 1101-1106.

研究成果: Conference contribution

Egawa, T, Ishikawa, H, Yamamoto, K, Jimbo, T & Umeno, M 1997, Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. : SR Phillpot, PD Bristowe, DG Stroud & JR Smith (版), Materials Research Society Symposium - Proceedings. 巻. 482, MRS, pp. 1101-1106, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 97/12/1.
Egawa T, Ishikawa H, Yamamoto K, Jimbo T, Umeno M. Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. : Phillpot SR, Bristowe PD, Stroud DG, Smith JR, 編集者, Materials Research Society Symposium - Proceedings. 巻 482. MRS. 1997. p. 1101-1106
Egawa, T. ; Ishikawa, Hiroyasu ; Yamamoto, K. ; Jimbo, T. ; Umeno, M. / Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. Materials Research Society Symposium - Proceedings. 編集者 / S.R. Phillpot ; P.D. Bristowe ; D.G. Stroud ; J.R. Smith. 巻 482 MRS, 1997. pp. 1101-1106
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