A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1997|
|イベント||Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA|
継続期間: 1997 12月 1 → 1997 12月 4
ASJC Scopus subject areas