抜粋
A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1101-1106 |
| ページ数 | 6 |
| ジャーナル | Materials Research Society Symposium - Proceedings |
| 巻 | 482 |
| DOI | |
| 出版物ステータス | Published - 1997 |
| イベント | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA 継続期間: 1997 12 1 → 1997 12 4 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
フィンガープリント Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Egawa, T., Ishikawa, H., Yamamoto, K., Jimbo, T., & Umeno, M. (1997). Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. Materials Research Society Symposium - Proceedings, 482, 1101-1106. https://doi.org/10.1557/proc-482-1101