Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD

T. Egawa, H. Ishikawa, K. Yamamoto, T. Jimbo, M. Umeno

研究成果: Conference article査読

1 被引用数 (Scopus)


A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.

ジャーナルMaterials Research Society Symposium - Proceedings
出版ステータスPublished - 1997
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 12 11997 12 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。