抄録
A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Materials Research Society Symposium - Proceedings |
| 編集者 | S.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith |
| 出版者 | MRS |
| ページ | 1101-1106 |
| ページ数 | 6 |
| 巻 | 482 |
| 出版物ステータス | Published - 1997 |
| 外部発表 | Yes |
| イベント | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA 継続期間: 1997 12 1 → 1997 12 4 |
Other
| Other | Proceedings of the 1997 MRS Fall Meeting |
|---|---|
| 市 | Boston, MA, USA |
| 期間 | 97/12/1 → 97/12/4 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
これを引用
Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD. / Egawa, T.; Ishikawa, Hiroyasu; Yamamoto, K.; Jimbo, T.; Umeno, M.
Materials Research Society Symposium - Proceedings. 版 / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. 巻 482 MRS, 1997. p. 1101-1106.研究成果: Conference contribution
}
TY - GEN
T1 - Characteristics of GaN Schottky diode grown on sapphire substrate by MOCVD
AU - Egawa, T.
AU - Ishikawa, Hiroyasu
AU - Yamamoto, K.
AU - Jimbo, T.
AU - Umeno, M.
PY - 1997
Y1 - 1997
N2 - A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.
AB - A GaN layer was grown on sapphire substrate by metallorganic chemical vapor deposition and a Pt/Ti/Au Schottky diode was fabricated on the deposited layer. The diode revealed an ideality factor of 1.04 and a barrier height of 1.4 eV based on forward current-voltage characteristics calculations. The reverse current was as low as 1 mA at 100 V reverse voltage. MESFETS with 3-μm gate-length and 15 μm gate-width were also fabricated on high-quality GaN single crystalline layer. The MESFETS achieved maximum transconductance of 25 mS/mm and drain-source current of 210 mA/mm.
UR - http://www.scopus.com/inward/record.url?scp=0031345068&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031345068&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0031345068
VL - 482
SP - 1101
EP - 1106
BT - Materials Research Society Symposium - Proceedings
A2 - Phillpot, S.R.
A2 - Bristowe, P.D.
A2 - Stroud, D.G.
A2 - Smith, J.R.
PB - MRS
ER -