Characteristics of several high-k gate insulators for GaN power device

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Hajime Kiyono, Yoshihiro Irokawa, Koji Shiozaki, Yasuo Koide

研究成果: Conference contribution

抜粋

We systematically investigated characteristics of Pt-gated capacitors with four kinds of gate insulators such as Hfo.57Sio.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3. The Hf0.64Si0.36Ox films fabricated by post-deposition annealing (PDA) at 800°C in O2 (PDO), N2 (PDN), and 3%H2 (PDH) ambient exhibited quite different characteristics. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. The PDH capacitor exhibited an order of magnitude larger interface state density than the PDN capacitor, indicating that the PDN process can produce superior Hf0.64Si0.36Ox film. The Hf0.57Si0.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3 films after PDA at 800°C in N2 were 15.4, 15.9, 17.6, and 9, respectively. The HfO2 and Al2O3 films consist of polycrystalline structure while the Hf0.57Si0.43Ox and Hf0.64Si0.36Ox films maintain an amorphous structure. The different structure strongly affected to electrical properties. The Hf0.57Si0.43Ox and Hf0.64Si0.36Ox capacitors showed superior electrical properties such as a minimal flatband voltage (Vfo) hysteresis (≤ +70 mV) and a small Vfo, shift (≤ -0.46 V), as well as a low interface state density (∼ 3 × 1011 cm-2eV-1 at -0.45 eV from conduction band), and a high breakdown electric field (≥ 8.6 MV/cm) compared to those of the HfO2 and Al2O3 capacitors.

元の言語English
ホスト出版物のタイトルSemiconductor Process Integration 11
編集者J. Murota, C. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, Y. Cao
出版者Electrochemical Society Inc.
ページ109-117
ページ数9
エディション4
ISBN(電子版)9781607685395
DOI
出版物ステータスPublished - 2019 1 1
イベント11th Symposium on Semiconductor Process Integration - 236th ECS Meeting - Atlanta, United States
継続期間: 2019 10 132019 10 17

出版物シリーズ

氏名ECS Transactions
番号4
92
ISSN(印刷物)1938-6737
ISSN(電子版)1938-5862

Conference

Conference11th Symposium on Semiconductor Process Integration - 236th ECS Meeting
United States
Atlanta
期間19/10/1319/10/17

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Nabatame, T., Maeda, E., Inoue, M., Hirose, M., Kiyono, H., Irokawa, Y., ... Koide, Y. (2019). Characteristics of several high-k gate insulators for GaN power device. : J. Murota, C. Claeys, H. Iwai, M. Tao, S. Deleonibus, A. Mai, K. Shiojima, ... Y. Cao (版), Semiconductor Process Integration 11 (4 版, pp. 109-117). (ECS Transactions; 巻 92, 番号 4). Electrochemical Society Inc.. https://doi.org/10.1149/09204.0109ecst