抄録
The characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides were studied using mode-locked Ti-sapphire pump source with 80 ps pulse width. The logarithmic Raman gain linearly increased with increasing the pump power density as long as the gain was less than about 10 dB. It became nearly proportional to the square root of the pump power density with further increasing the pump power. The pulse-gated Raman gain as high as 20 dB was attained.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 43-46 |
| ページ数 | 4 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 93 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 2003 1月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）