Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides

T. Tanabe, K. Suto, T. Saito, T. Kimura, Y. Oyama, J. Nishizawa

研究成果: Article査読

13 被引用数 (Scopus)

抄録

The characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides were studied using mode-locked Ti-sapphire pump source with 80 ps pulse width. The logarithmic Raman gain linearly increased with increasing the pump power density as long as the gain was less than about 10 dB. It became nearly proportional to the square root of the pump power density with further increasing the pump power. The pulse-gated Raman gain as high as 20 dB was attained.

本文言語English
ページ(範囲)43-46
ページ数4
ジャーナルJournal of Applied Physics
93
1
DOI
出版ステータスPublished - 2003 1月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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