Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

研究成果: Article査読

91 被引用数 (Scopus)

抄録

A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

本文言語English
ページ(範囲)888-894
ページ数7
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
2
出版ステータスPublished - 2003 3月 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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