Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

研究成果: Article

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A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

元の言語English
ページ(範囲)888-894
ページ数7
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
発行部数2
出版物ステータスPublished - 2003 3 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

フィンガープリント Characterization of different-Al-content Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterostructures and high-electron-mobility transistors on sapphire' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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