We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.
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