Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Hiroyasu Ishikawa, Baijun Zhang, Kenta Asano, Takashi Egawa, Takashi Jimbo

研究成果: Article

20 引用 (Scopus)

抄録

We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.

元の言語English
ページ(範囲)322-326
ページ数5
ジャーナルJournal of Crystal Growth
272
発行部数1-4 SPEC. ISS.
DOI
出版物ステータスPublished - 2004 12 10
外部発表Yes

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Distributed Bragg reflectors
Bragg reflectors
Light emitting diodes
light emitting diodes
Semiconductor quantum wells
quantum wells
Metallorganic chemical vapor deposition
Substrates
metalorganic chemical vapor deposition
insertion
Cracks
cracks
output

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si. / Ishikawa, Hiroyasu; Zhang, Baijun; Asano, Kenta; Egawa, Takashi; Jimbo, Takashi.

:: Journal of Crystal Growth, 巻 272, 番号 1-4 SPEC. ISS., 10.12.2004, p. 322-326.

研究成果: Article

Ishikawa, Hiroyasu ; Zhang, Baijun ; Asano, Kenta ; Egawa, Takashi ; Jimbo, Takashi. / Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si. :: Journal of Crystal Growth. 2004 ; 巻 272, 番号 1-4 SPEC. ISS. pp. 322-326.
@article{44ab346613464d3a8a731992c3513820,
title = "Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si",
abstract = "We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.",
keywords = "A3. Metalorganic chemical vapor deposition, B1. Nitrides, B3. Light-emitting diodes",
author = "Hiroyasu Ishikawa and Baijun Zhang and Kenta Asano and Takashi Egawa and Takashi Jimbo",
year = "2004",
month = "12",
day = "10",
doi = "10.1016/j.jcrysgro.2004.08.054",
language = "English",
volume = "272",
pages = "322--326",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4 SPEC. ISS.",

}

TY - JOUR

T1 - Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

AU - Ishikawa, Hiroyasu

AU - Zhang, Baijun

AU - Asano, Kenta

AU - Egawa, Takashi

AU - Jimbo, Takashi

PY - 2004/12/10

Y1 - 2004/12/10

N2 - We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.

AB - We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B3. Light-emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=10044287457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044287457&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.08.054

DO - 10.1016/j.jcrysgro.2004.08.054

M3 - Article

AN - SCOPUS:10044287457

VL - 272

SP - 322

EP - 326

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4 SPEC. ISS.

ER -