Characterization of local electrical properties of gate dielectrics by conductive atomic force microscopy

Chemical Compounds

• Conductive Atomic Force Microscopy 100%
• Dielectric Material 56%
• Electrical Property 54%
• Atomic Force Microscopy 51%
• Leakage Current 42%
• Vacuum 25%
• Environment 18%
• Liquid Film 15%
• Reduction 14%
• Oxidation Reaction 14%
• Surface 10%

Engineering & Materials Science

• Gate dielectrics 91%
• Atomic force microscopy 82%
• Electric properties 68%
• Ultrahigh vacuum 50%
• Leakage currents 34%
• Oxidation 28%

Physics & Astronomy

• leakage 53%
• atomic force microscopy 49%
• electrical properties 47%
• characterization 35%
• conduction 21%
• ultrahigh vacuum 16%
• oxidation 11%