| 元の言語 | English |
|---|---|
| ページ（範囲） | 245-250 |
| ジャーナル | Proceedings of 1996 VLSI Multilevel Interconnection Conference |
| 出版物ステータス | Published - 1996 5 1 |
これを引用
K.Ueno, K. U., V.M.Donnelly, V. M. D., Y.Tsuchiya, Y. T., K.Ohto, K. O., T.Kikkawa, T. K., & Ueno, K. (1996). Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures. Proceedings of 1996 VLSI Multilevel Interconnection Conference, 245-250.
Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures. / K.Ueno, K.Ueno; V.M.Donnelly, V.M.Donnelly; Y.Tsuchiya, Y.Tsuchiya; K.Ohto, K.Ohto; T.Kikkawa, T.Kikkawa; Ueno, Kazuyoshi.
：: Proceedings of 1996 VLSI Multilevel Interconnection Conference, 01.05.1996, p. 245-250.研究成果: Article
K.Ueno, KU, V.M.Donnelly, VMD, Y.Tsuchiya, YT, K.Ohto, KO, T.Kikkawa, TK & Ueno, K 1996, 'Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures', Proceedings of 1996 VLSI Multilevel Interconnection Conference, pp. 245-250.
K.Ueno KU, V.M.Donnelly VMD, Y.Tsuchiya YT, K.Ohto KO, T.Kikkawa TK, Ueno K. Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures. Proceedings of 1996 VLSI Multilevel Interconnection Conference. 1996 5 1;245-250.
@article{980b83fcacad4c34adf447f9fb75de41,
title = "Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures",
author = "K.Ueno K.Ueno and V.M.Donnelly V.M.Donnelly and Y.Tsuchiya Y.Tsuchiya and K.Ohto K.Ohto and T.Kikkawa T.Kikkawa and Kazuyoshi Ueno",
year = "1996",
month = "5",
day = "1",
language = "English",
pages = "245--250",
journal = "Proceedings of 1996 VLSI Multilevel Interconnection Conference",
}
TY - JOUR
T1 - Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures
AU - K.Ueno, K.Ueno
AU - V.M.Donnelly, V.M.Donnelly
AU - Y.Tsuchiya, Y.Tsuchiya
AU - K.Ohto, K.Ohto
AU - T.Kikkawa, T.Kikkawa
AU - Ueno, Kazuyoshi
PY - 1996/5/1
Y1 - 1996/5/1
M3 - Article
SP - 245
EP - 250
JO - Proceedings of 1996 VLSI Multilevel Interconnection Conference
JF - Proceedings of 1996 VLSI Multilevel Interconnection Conference
ER -