Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures

K.Ueno K.Ueno, V.M.Donnelly V.M.Donnelly, Y.Tsuchiya Y.Tsuchiya, K.Ohto K.Ohto, T.Kikkawa T.Kikkawa, Kazuyoshi Ueno

研究成果: Article

元の言語	English
ページ（範囲）	245-250
ジャーナル	Proceedings of 1996 VLSI Multilevel Interconnection Conference
出版物ステータス	Published - 1996 5 1

これを引用

@article{980b83fcacad4c34adf447f9fb75de41,

title = "Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures",

author = "K.Ueno K.Ueno and V.M.Donnelly V.M.Donnelly and Y.Tsuchiya Y.Tsuchiya and K.Ohto K.Ohto and T.Kikkawa T.Kikkawa and Kazuyoshi Ueno",

year = "1996",

month = may,

day = "1",

language = "English",

pages = "245--250",

journal = "Proceedings of 1996 VLSI Multilevel Interconnection Conference",

}

TY - JOUR

T1 - Cleaning of CHF3 plasma etched SiO2/SiN/Cu via structures

AU - K.Ueno, K.Ueno

AU - V.M.Donnelly, V.M.Donnelly

AU - Y.Tsuchiya, Y.Tsuchiya

AU - K.Ohto, K.Ohto

AU - T.Kikkawa, T.Kikkawa

AU - Ueno, Kazuyoshi

PY - 1996/5/1

Y1 - 1996/5/1

M3 - Article

SP - 245

EP - 250

JO - Proceedings of 1996 VLSI Multilevel Interconnection Conference

JF - Proceedings of 1996 VLSI Multilevel Interconnection Conference

ER -