Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures with dilute hydrofluoric acid solutions

Kazuyoshi Ueno, Vincent M. Donnelly, Takamaro Kikkawa

研究成果: Article査読

35 被引用数 (Scopus)

抄録

After etching in a CHF3/Ar electron cyclotron resonance plasma, SiO2/SiN/Cu via structures for multilevel Cu interconnection were investigated with angle-resolved x-ray photoelectron spectroscopy. Photoelectron shadowing, determined by x-ray photoelectron spectroscopy takeoff angle, and electrostatic charging were used to determine the chemical composition and amount of contamination on the dielectric horizontal surfaces and via sidewalls, as well as on the Cu at the bottoms of the via holes. All surfaces were covered with one to two monolayers of a CFx layer (CF > CF2 > CF3). The dielectric surfaces were also covered with a small amount (∼0.1 monolayers) of Cu, and the Cu at the bottom of the via was contaminated with O (mainly CuO) and F. After cleaning with dilute HF solution, the dielectric surfaces were free of Cu and most of the F and C. CuO was also removed from the Cu surface by this treatment; however, Cu2O and CFx remained.

本文言語English
ページ(範囲)2565-2572
ページ数8
ジャーナルJournal of the Electrochemical Society
144
7
DOI
出版ステータスPublished - 1997 7
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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