Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using a hydrogen plasma, an oxygen plasma, and hexafluoroacetylacetone vapors

Kazuyoshi Ueno, Vincent M. Donnelly, Yasuaki Tsuchiya

研究成果: Article査読

23 被引用数 (Scopus)

抄録

Cleaning processes for CHF3 reactive ion etched Cu vias, consisting of exposure to a hydrogen plasma, an oxygen plasma, and hexafluoroacetylacetone [H(hfac)] vapors have been investigated. After each step in the cleaning process, the dielectric surface and the Cu surface of via structures were analyzed by in situ by angle-resolved x-ray photoelectron spectroscopy. A hydrogen plasma was effective in removing carbon and fluorine deposits on all of the surfaces, and CuO and Cu2O on the Cu surface at the via bottom. It was not effective, however, in removing the Cu deposited on the dielectric surfaces. An oxygen plasma is effective in removing all the carbon and some fluorine deposits. Cu deposits on the dielectric surfaces were not removed, however, and the Cu surface was oxidized. Exposure to H(hfac) vapors reduced some of the Cu deposits on the dielectric, however Cu diffusion into SiO2 possibly occurred during this exposure at the elevated temperature of 200 °C. CuO and Cu2O were removed by the H(hfac) exposure above 150 °C. A three-step cleaning sequence was devised which consists of a brief oxygen-plasma exposure, a dilute-HF solution dip, followed by exposure to H(hfac) vapors. The cleaning sequence is effective in obtaining a clean dielectric surface and an oxide-free Cu surface at the via bottom that allows low contact resistances of 5.8-6.8×10-11 Ω cm2.

本文言語English
ページ(範囲)2986-2995
ページ数10
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16
6
出版ステータスPublished - 1998 11月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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