Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

研究成果: Article査読

55 被引用数 (Scopus)

抄録

The drain-current collapse at high drain voltage has been studied in AlGaN/GaN high-electron-mobility transistors (HEMTs) on both semi-insulating (SI)-SiC and sapphire substrates using small frequency (120 Hz) sinusoidal wave superimposed dc IDS-VDS characteristics. Low drain-current collapses were observed in AlGaN/GaN HEMTs on SI-SiC substrate when compared with the HEMTs on sapphire substrates. Two and three thermally activated deep traps were observed on SiC-based and sapphire-based HEMTs, respectively. The existence of an additional deep trap (ΔE=0.61eV) could be associated with the material defects/ dislocations responsible for the severe drain current collapse in sapphire-based HEMTs. The white-light illuminated I DS-VDS characteristics support the existence of more number of deep traps in the sapphire-based HEMTs.

本文言語English
ページ(範囲)3073-3075
ページ数3
ジャーナルApplied Physics Letters
81
16
DOI
出版ステータスPublished - 2002 10月 14
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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