Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

Yijun Sun, Masayuki Yamamori, Takashi Egawa, Hiroyasu Ishikawa

研究成果: Article

3 引用 (Scopus)

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GaNAs/GaAs triple quantum wells (QWs) grown by chemical beam epitaxy are annealed by two methods, ex situ rapid thermal annealing (RTA) and in situ annealing in a growth chamber followed by ex situ RTA (NRTA). The effects of annealing method on the structural, morphological, and optical properties of the QWs are studied comparatively. The results show that although there is surface desorption for both RTA and NRTA, the holes on the sample surface after desorption are clearly different. RTA is better than NRTA from the viewpoints of both surface morphology and optical properties.

元の言語English
ページ(範囲)L334-L336
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
発行部数3 A
出版物ステータスPublished - 2004 3 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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