Computer-Aided Analysis of GaAs n-i-n Structures with a Heavily Compensated i-Layer

Kazushige Horio, Hisayoshi Yanai, Toshiaki Ikoma

研究成果: Article査読

61 被引用数 (Scopus)

抄録

Current-voltage characteristics and space-charge distributions in an n-i-n structure have been numerically analyzed and compared with Lampert's theory. It is found that an effective resistivity in the low-voltage region depends on acceptor and trap densities and the length of an i-layer. The analytical model has been presented to intimate the effective resistivity and the onset voltage for current rise. The back-gating effect also has been analyzed in terms of a separation distance between devices and an acceptor density. To achieve a good Isolation between two devices in GaAs IC's, it is suggested that a sha low acceptor density as well as a trap density must be larger than a critical value.

本文言語English
ページ(範囲)1242-1250
ページ数9
ジャーナルIEEE Transactions on Electron Devices
33
9
DOI
出版ステータスPublished - 1986 9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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