Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Ying Peng, Lei Miao, Chengyan Liu, Haili Song, Masashi Kurosawa, Osamu Nakatsuka, Song Yi Back, Jong Soo Rhyee, Masayuki Murata, Sakae Tanemura, Takahiro Baba, Tetsuya Baba, Takahiro Ishizaki, Takao Mori

研究成果: Article査読

7 被引用数 (Scopus)

抄録

SiGe-based thermoelectric (TE) materials are well-known for high-temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P-ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 µW cm−1 K−2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.

本文言語English
論文番号2103191
ジャーナルAdvanced Energy Materials
12
2
DOI
出版ステータスPublished - 2022 1月 13

ASJC Scopus subject areas

  • 再生可能エネルギー、持続可能性、環境
  • 材料科学(全般)

フィンガープリント

「Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル