Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment

Y. Takanashi, M. Hirano, T. Sugeta

    研究成果: Article査読

    6 被引用数 (Scopus)

    抄録

    Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

    本文言語English
    ページ(範囲)241-243
    ページ数3
    ジャーナルIEEE Electron Device Letters
    5
    7
    DOI
    出版ステータスPublished - 1984 7

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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