CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT.

Y. Takanashi, M. Hirano, T. Sugeta

研究成果: Article

6 引用 (Scopus)

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Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate two-dimensional electron gas (2DEG) AlGaAs/GaAs FETs through only heat treatment are investigated. Ni/Ti/Au gate FETs vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300 degree C. The same experiment is made for Ti/Au gate FETs, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.

元の言語English
ページ(範囲)241-243
ページ数3
ジャーナルElectron device letters
EDL-5
発行部数7
出版物ステータスPublished - 1984 7
外部発表Yes

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ASJC Scopus subject areas

  • Engineering(all)

これを引用

Takanashi, Y., Hirano, M., & Sugeta, T. (1984). CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT. Electron device letters, EDL-5(7), 241-243.