抜粋
Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate 2DEG AlGaAs/GaAs FET's through only heat treatment are investigated. Ni/Ti/Au gate FET's vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300°C. The same experiment is made for Ti/Au gate FET's, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 241-243 |
| ページ数 | 3 |
| ジャーナル | IEEE Electron Device Letters |
| 巻 | 5 |
| 発行部数 | 7 |
| DOI | |
| 出版物ステータス | Published - 1984 7 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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これを引用
Takanashi, Y., Hirano, M., & Sugeta, T. (1984). Control of Threshold Voltage of AlGaAs/GaAs 2DEG FET's through Heat Treatment. IEEE Electron Device Letters, 5(7), 241-243. https://doi.org/10.1109/EDL.1984.25903