抜粋
Threshold voltage controls of Ni/Ti/Au gate and Ti/Au gate two-dimensional electron gas (2DEG) AlGaAs/GaAs FETs through only heat treatment are investigated. Ni/Ti/Au gate FETs vary over quite a wide range from a depletion mode to an enhancement mode without degradation of FET characteristics after heat treatment at 300 degree C. The same experiment is made for Ti/Au gate FETs, but the threshold voltage change is negligibly small. It is confirmed that Ni/Ti/Au can be used as the gate metal for E-FET and Ti/Au as the gate metal for D-FET under simultaneous heat treatment. In addition, a mechanism for penetrating the barrier metal into the underlying layer is discussed.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 241-243 |
| ページ数 | 3 |
| ジャーナル | Electron device letters |
| 巻 | EDL-5 |
| 発行部数 | 7 |
| 出版物ステータス | Published - 1984 7 |
| 外部発表 | Yes |
フィンガープリント
ASJC Scopus subject areas
- Engineering(all)
これを引用
Takanashi, Y., Hirano, M., & Sugeta, T. (1984). CONTROL OF THRESHOLD VOLTAGE OF AlGaAs/GaAs 2DEG FET'S THROUGH HEAT TREATMENT. Electron device letters, EDL-5(7), 241-243.