Control over the crystalline state of sapphire

Saulius Juodkazis, Koichi Nishimura, Hiroaki Misawa, Takahiro Ebisui, Ryoichi Waki, Shigeki Matsuo, Tatsuya Okada

研究成果: Article

114 引用 (Scopus)

抜粋

Control over the crystallanity and chemical reactivity of sapphire (Al 2O3) using femtosecond pulse exposure was investigated. Crystalline-to-amorphous and amorphous-to-polycrystalline transitions were induced inside a sapphire sample using single and multi-pulse radiation. The method allowed the fabrication of a 3D network of channels without apparent constraints on their length. Multipulse exposure of sapphire caused partial recrystallization of the amorphous phase. The results showed high selectivity of wet etching in sapphire optically amorphized by the pulses. It was also observed that the crystallinity of sapphire can be controlled with a precision of several nanometers by the appropriate choice of exposure conditions. It was demonstrated that matter can be subjected to extreme pressure by commonly available femtosecond laser radiation.

元の言語English
ページ(範囲)1361-1364
ページ数4
ジャーナルAdvanced Materials
18
発行部数11
DOI
出版物ステータスPublished - 2006 6 6
外部発表Yes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Juodkazis, S., Nishimura, K., Misawa, H., Ebisui, T., Waki, R., Matsuo, S., & Okada, T. (2006). Control over the crystalline state of sapphire. Advanced Materials, 18(11), 1361-1364. https://doi.org/10.1002/adma.200501837