抄録
Metal atoms bonded with Si adatoms on the Si (111) - (7×7) surface undergo migration by hopping adjacent Si-rest atoms with dangling bond. By saturated adsorption of Si (111) - (7×7) surface with C2 H5 OH, the whole Si-rest atoms and a half of Si adatoms are occupied with Si-H and Si-O C2 H5, so that the Zn atoms adsorbed on this surface cannot migrate by hopping. When Zn atoms were deposited on this surface, ca. 5 nm Zn dots were grown in the hexagonal spacing of ca. 5.4 nm width around the corner holes, which work as a mold. This is quite different from the growth of honeycomb layers composed of Zn3 clusters on the clean Si (111) - (7×7) surface. The dots grow up to nine (1.97 nm) to 13 layers (2.64 nm) by keeping their size, which implies a layer-by-layer growth of dots in the mold, where the growth is controlled by the kinetics instead of energetic feasibility.
| 元の言語 | English |
|---|---|
| 記事番号 | 144705 |
| ジャーナル | Journal of Chemical Physics |
| 巻 | 127 |
| 発行部数 | 14 |
| DOI | |
| 出版物ステータス | Published - 2007 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
これを引用
Controlled growth of Zn nano-dots on a Si (111) -7×7 surface saturated with C2H5OH. / Jiang, Xiaohong; Xie, Zhaoxiong; Shimojo, Masayuki; Tanaka, Ken Ichi.
：: Journal of Chemical Physics, 巻 127, 番号 14, 144705, 2007.研究成果: Article
}
TY - JOUR
T1 - Controlled growth of Zn nano-dots on a Si (111) -7×7 surface saturated with C2H5OH
AU - Jiang, Xiaohong
AU - Xie, Zhaoxiong
AU - Shimojo, Masayuki
AU - Tanaka, Ken Ichi
PY - 2007
Y1 - 2007
N2 - Metal atoms bonded with Si adatoms on the Si (111) - (7×7) surface undergo migration by hopping adjacent Si-rest atoms with dangling bond. By saturated adsorption of Si (111) - (7×7) surface with C2 H5 OH, the whole Si-rest atoms and a half of Si adatoms are occupied with Si-H and Si-O C2 H5, so that the Zn atoms adsorbed on this surface cannot migrate by hopping. When Zn atoms were deposited on this surface, ca. 5 nm Zn dots were grown in the hexagonal spacing of ca. 5.4 nm width around the corner holes, which work as a mold. This is quite different from the growth of honeycomb layers composed of Zn3 clusters on the clean Si (111) - (7×7) surface. The dots grow up to nine (1.97 nm) to 13 layers (2.64 nm) by keeping their size, which implies a layer-by-layer growth of dots in the mold, where the growth is controlled by the kinetics instead of energetic feasibility.
AB - Metal atoms bonded with Si adatoms on the Si (111) - (7×7) surface undergo migration by hopping adjacent Si-rest atoms with dangling bond. By saturated adsorption of Si (111) - (7×7) surface with C2 H5 OH, the whole Si-rest atoms and a half of Si adatoms are occupied with Si-H and Si-O C2 H5, so that the Zn atoms adsorbed on this surface cannot migrate by hopping. When Zn atoms were deposited on this surface, ca. 5 nm Zn dots were grown in the hexagonal spacing of ca. 5.4 nm width around the corner holes, which work as a mold. This is quite different from the growth of honeycomb layers composed of Zn3 clusters on the clean Si (111) - (7×7) surface. The dots grow up to nine (1.97 nm) to 13 layers (2.64 nm) by keeping their size, which implies a layer-by-layer growth of dots in the mold, where the growth is controlled by the kinetics instead of energetic feasibility.
UR - http://www.scopus.com/inward/record.url?scp=35248879340&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35248879340&partnerID=8YFLogxK
U2 - 10.1063/1.2772247
DO - 10.1063/1.2772247
M3 - Article
AN - SCOPUS:35248879340
VL - 127
JO - Journal of Chemical Physics
JF - Journal of Chemical Physics
SN - 0021-9606
IS - 14
M1 - 144705
ER -