Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited)

K.Ueno K.Ueno, Kazuyoshi Ueno

研究成果: Article

元の言語English
ジャーナルProceedings of Annual Dielectric and CVD Metallization Symposium
出版物ステータスPublished - 1995 11 1

これを引用

Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited). / K.Ueno, K.Ueno; Ueno, Kazuyoshi.

：: Proceedings of Annual Dielectric and CVD Metallization Symposium, 01.11.1995.

研究成果: Article

K.Ueno, KU & Ueno, K 1995, 'Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited)', Proceedings of Annual Dielectric and CVD Metallization Symposium.
K.Ueno KU, Ueno K. Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited). Proceedings of Annual Dielectric and CVD Metallization Symposium. 1995 11 1.
K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited). ：: Proceedings of Annual Dielectric and CVD Metallization Symposium. 1995.
@article{07dbd379b35a4850a27a8f5d04c9a1d5,
title = "Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited)",
author = "K.Ueno K.Ueno and Kazuyoshi Ueno",
year = "1995",
month = "11",
day = "1",
language = "English",
journal = "Proceedings of Annual Dielectric and CVD Metallization Symposium",

}

TY - JOUR

T1 - Copper and tungsten metallization using MOCVD-TiN barrier layer (Invited)

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

PY - 1995/11/1

Y1 - 1995/11/1

M3 - Article

JO - Proceedings of Annual Dielectric and CVD Metallization Symposium

JF - Proceedings of Annual Dielectric and CVD Metallization Symposium

ER -