The growth rate of an SiO2 film on various metal-oxide (M-O) underlayers by plasma-enhanced atomic layer deposition (ALD) using tris(dimethylamino)silane precursor and O2 plasma gas is systematically investigated, and the effect of the difference in the electronegativity of the M-O underlayer on the ALD-SiO2 growth mechanism is also discussed. All data for the ALD-SiO2 film thickness on HfO2, TiO2, Al2O3, and SiO2 underlayers satisfied a linear relationship as a function of the ALD cycle. The growth per cycle (GPC) value of the ALD-SiO2 film increased in the following order: SiO2 (0.043 nm/cycle) < Al2O3 (0.14) < TiO2 (0.17) < HfO2 (0.22). On the other hand, the negative charge concentration of oxygen atoms in the M-O underlayer becomes higher in the following order: Si-O (1.76 eV) < Al-O (2.03) < Ti-O (2.18) < Hf-O (2.27) due to the electronegativity difference between the Si, Al, Ti, Hf, and O elements of the M-O underlayer. A correlation between the GPC of the ALD-SiO2 film and the difference in the electronegativity of the M-O underlayer was also determined.
|ジャーナル||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版ステータス||Published - 2020 5 1|
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