Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG

Takuro Tomita, Ryota Kumai, Shigeki Matsuo, Shuichi Hashimoto, Makoto Yamaguchi

研究成果: Article

16 引用 (Scopus)

抄録

The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The results showed that the cross sections of coarse ripples on Si and SiC have a convex shape with narrower valleys, whereas those of HOPG have sharp ridges and wide wings with a poorer aspect ratio. This difference may arise from the difference in material phase conversion processes induced by femtosecond laser irradiation. The cross-sectional profiles of fine ripples on SiC and HOPG, which give useful information on the ripple formation process, are also discussed.

元の言語English
ページ(範囲)271-276
ページ数6
ジャーナルApplied Physics A: Materials Science and Processing
97
発行部数2
DOI
出版物ステータスPublished - 2009 11
外部発表Yes

Fingerprint

Graphite
Silicon
Silicon carbide
Laser beam effects
Ultrashort pulses
Ion beams
Aspect ratio
Scanning electron microscopy
silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

これを引用

Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG. / Tomita, Takuro; Kumai, Ryota; Matsuo, Shigeki; Hashimoto, Shuichi; Yamaguchi, Makoto.

:: Applied Physics A: Materials Science and Processing, 巻 97, 番号 2, 11.2009, p. 271-276.

研究成果: Article

Tomita, Takuro ; Kumai, Ryota ; Matsuo, Shigeki ; Hashimoto, Shuichi ; Yamaguchi, Makoto. / Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG. :: Applied Physics A: Materials Science and Processing. 2009 ; 巻 97, 番号 2. pp. 271-276.
@article{961c7fba58d841b394f1efa04f689413,
title = "Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG",
abstract = "The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The results showed that the cross sections of coarse ripples on Si and SiC have a convex shape with narrower valleys, whereas those of HOPG have sharp ridges and wide wings with a poorer aspect ratio. This difference may arise from the difference in material phase conversion processes induced by femtosecond laser irradiation. The cross-sectional profiles of fine ripples on SiC and HOPG, which give useful information on the ripple formation process, are also discussed.",
author = "Takuro Tomita and Ryota Kumai and Shigeki Matsuo and Shuichi Hashimoto and Makoto Yamaguchi",
year = "2009",
month = "11",
doi = "10.1007/s00339-009-5364-2",
language = "English",
volume = "97",
pages = "271--276",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "2",

}

TY - JOUR

T1 - Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG

AU - Tomita, Takuro

AU - Kumai, Ryota

AU - Matsuo, Shigeki

AU - Hashimoto, Shuichi

AU - Yamaguchi, Makoto

PY - 2009/11

Y1 - 2009/11

N2 - The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The results showed that the cross sections of coarse ripples on Si and SiC have a convex shape with narrower valleys, whereas those of HOPG have sharp ridges and wide wings with a poorer aspect ratio. This difference may arise from the difference in material phase conversion processes induced by femtosecond laser irradiation. The cross-sectional profiles of fine ripples on SiC and HOPG, which give useful information on the ripple formation process, are also discussed.

AB - The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The results showed that the cross sections of coarse ripples on Si and SiC have a convex shape with narrower valleys, whereas those of HOPG have sharp ridges and wide wings with a poorer aspect ratio. This difference may arise from the difference in material phase conversion processes induced by femtosecond laser irradiation. The cross-sectional profiles of fine ripples on SiC and HOPG, which give useful information on the ripple formation process, are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=70349272149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349272149&partnerID=8YFLogxK

U2 - 10.1007/s00339-009-5364-2

DO - 10.1007/s00339-009-5364-2

M3 - Article

AN - SCOPUS:70349272149

VL - 97

SP - 271

EP - 276

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 2

ER -