The cross-sectional profiles of ripple structures on silicon (Si), silicon carbide (SiC), and highly oriented pyrolytic graphite (HOPG) were studied by direct observation. The ripple structures were cut by an ion beam, and their cross sections were observed by scanning electron microscopy. The results showed that the cross sections of coarse ripples on Si and SiC have a convex shape with narrower valleys, whereas those of HOPG have sharp ridges and wide wings with a poorer aspect ratio. This difference may arise from the difference in material phase conversion processes induced by femtosecond laser irradiation. The cross-sectional profiles of fine ripples on SiC and HOPG, which give useful information on the ripple formation process, are also discussed.
|ジャーナル||Applied Physics A: Materials Science and Processing|
|出版ステータス||Published - 2009 11 1|
ASJC Scopus subject areas
- 化学 (全般)