Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface

T. Okada, H. Kawahara, Y. Ishida, R. Kumai, T. Tomita, Shigeki Matsuo, S. Hashimoto, M. Kawamoto, Y. Makita, M. Yamaguchi

研究成果: Article

16 引用 (Scopus)

抄録

The microstructures of femtosecond laser-induced ripples formed on a 4H-SiC single-crystal surface were studied by cross-sectional transmission electron microscopy (TEM), with particular attention on the crystal structure underlying fine and coarse ripples differing in period and morphology. Conventional and high-resolution TEM analyses showed that a continuous amorphous layer approximately 10 to 50 nm thick covers the topmost region of both fine and coarse ripples. These results strongly suggest that the fundamental surface deformation process is common for the entire region of fine and coarse ripples, even though the factors that determine their periods are different.

元の言語English
ページ(範囲)665-668
ページ数4
ジャーナルApplied Physics A: Materials Science and Processing
92
発行部数3
DOI
出版物ステータスPublished - 2008 8
外部発表Yes

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Single crystal surfaces
High resolution transmission electron microscopy
Ultrashort pulses
ripples
crystal surfaces
Crystal structure
Transmission electron microscopy
transmission electron microscopy
Microstructure
Lasers
single crystals
lasers
microstructure
crystal structure
high resolution

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

これを引用

Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface. / Okada, T.; Kawahara, H.; Ishida, Y.; Kumai, R.; Tomita, T.; Matsuo, Shigeki; Hashimoto, S.; Kawamoto, M.; Makita, Y.; Yamaguchi, M.

:: Applied Physics A: Materials Science and Processing, 巻 92, 番号 3, 08.2008, p. 665-668.

研究成果: Article

Okada, T, Kawahara, H, Ishida, Y, Kumai, R, Tomita, T, Matsuo, S, Hashimoto, S, Kawamoto, M, Makita, Y & Yamaguchi, M 2008, 'Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface', Applied Physics A: Materials Science and Processing, 巻. 92, 番号 3, pp. 665-668. https://doi.org/10.1007/s00339-008-4611-2
Okada, T. ; Kawahara, H. ; Ishida, Y. ; Kumai, R. ; Tomita, T. ; Matsuo, Shigeki ; Hashimoto, S. ; Kawamoto, M. ; Makita, Y. ; Yamaguchi, M. / Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface. :: Applied Physics A: Materials Science and Processing. 2008 ; 巻 92, 番号 3. pp. 665-668.
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AU - Okada, T.

AU - Kawahara, H.

AU - Ishida, Y.

AU - Kumai, R.

AU - Tomita, T.

AU - Matsuo, Shigeki

AU - Hashimoto, S.

AU - Kawamoto, M.

AU - Makita, Y.

AU - Yamaguchi, M.

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AB - The microstructures of femtosecond laser-induced ripples formed on a 4H-SiC single-crystal surface were studied by cross-sectional transmission electron microscopy (TEM), with particular attention on the crystal structure underlying fine and coarse ripples differing in period and morphology. Conventional and high-resolution TEM analyses showed that a continuous amorphous layer approximately 10 to 50 nm thick covers the topmost region of both fine and coarse ripples. These results strongly suggest that the fundamental surface deformation process is common for the entire region of fine and coarse ripples, even though the factors that determine their periods are different.

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