Cross-sectional TEM analysis of structural change in 4H-SiC single crystal irradiated by femtosecond laser pulses

Hiroyuki Kawahara, Tatsuya Okada, Ryota Kumai, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Makoto Yamaguchi

研究成果: Conference contribution

抄録

We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC single crystal surface. Here, we paid attention to the crystal structures underlying the coarse and fine ripples and the three-dimensional distribution of amorphous phase. Conventional and high-resolution TEM analyses made clear that a continuous amorphous layer approximately of 50 nm thick exist at the topmost region of both coarse and fine ripples. The result strongly suggests that the fundamental surface deformation process is common for coarse and fine ripples, even though the factors which determine their periods are different.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2007
編集者Takashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
出版社Trans Tech Publications Ltd
ページ883-886
ページ数4
ISBN(印刷版)9780878493579
出版ステータスPublished - 2009 1 1
外部発表はい
イベント12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
継続期間: 2007 10 142007 10 19

出版物シリーズ

名前Materials Science Forum
600-603
ISSN(印刷版)0255-5476

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period07/10/1407/10/19

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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