Cross-sectional TEM analysis of structural change in 4H-SiC single crystal irradiated by femtosecond laser pulses

Hiroyuki Kawahara, Tatsuya Okada, Ryota Kumai, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Makoto Yamaguchi

研究成果: Article

抄録

We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC single crystal surface. Here, we paid attention to the crystal structures underlying the coarse and fine ripples and the three-dimensional distribution of amorphous phase. Conventional and high-resolution TEM analyses made clear that a continuous amorphous layer approximately of 50 nm thick exist at the topmost region of both coarse and fine ripples. The result strongly suggests that the fundamental surface deformation process is common for coarse and fine ripples, even though the factors which determine their periods are different.

元の言語English
ページ(範囲)883-886
ページ数4
ジャーナルMaterials Science Forum
600-603
DOI
出版物ステータスPublished - 2009
外部発表Yes

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Ultrashort pulses
ripples
Single crystals
Transmission electron microscopy
Single crystal surfaces
transmission electron microscopy
single crystals
High resolution transmission electron microscopy
pulses
lasers
Crystal structure
crystal surfaces
crystal structure
high resolution

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

これを引用

Cross-sectional TEM analysis of structural change in 4H-SiC single crystal irradiated by femtosecond laser pulses. / Kawahara, Hiroyuki; Okada, Tatsuya; Kumai, Ryota; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi; Yamaguchi, Makoto.

:: Materials Science Forum, 巻 600-603, 2009, p. 883-886.

研究成果: Article

Kawahara, Hiroyuki ; Okada, Tatsuya ; Kumai, Ryota ; Tomita, Takuro ; Matsuo, Shigeki ; Hashimoto, Shuichi ; Yamaguchi, Makoto. / Cross-sectional TEM analysis of structural change in 4H-SiC single crystal irradiated by femtosecond laser pulses. :: Materials Science Forum. 2009 ; 巻 600-603. pp. 883-886.
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AU - Kawahara, Hiroyuki

AU - Okada, Tatsuya

AU - Kumai, Ryota

AU - Tomita, Takuro

AU - Matsuo, Shigeki

AU - Hashimoto, Shuichi

AU - Yamaguchi, Makoto

PY - 2009

Y1 - 2009

N2 - We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC single crystal surface. Here, we paid attention to the crystal structures underlying the coarse and fine ripples and the three-dimensional distribution of amorphous phase. Conventional and high-resolution TEM analyses made clear that a continuous amorphous layer approximately of 50 nm thick exist at the topmost region of both coarse and fine ripples. The result strongly suggests that the fundamental surface deformation process is common for coarse and fine ripples, even though the factors which determine their periods are different.

AB - We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC single crystal surface. Here, we paid attention to the crystal structures underlying the coarse and fine ripples and the three-dimensional distribution of amorphous phase. Conventional and high-resolution TEM analyses made clear that a continuous amorphous layer approximately of 50 nm thick exist at the topmost region of both coarse and fine ripples. The result strongly suggests that the fundamental surface deformation process is common for coarse and fine ripples, even though the factors which determine their periods are different.

KW - 4H-SiC

KW - Femotosecond laser

KW - Ripple

KW - Transmission electron microscopy

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