Crystallization of Ge thin films by Au-induced layer exchange: Effect of Au layer thickness on Ge crystal orientation

Narin Sunthornpan, Kenjiro Kimura, Kentaro Kyuno

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Au layer thickness dependence (9-34 nm) of Ge crystallization in the metal-induced layer exchange process has been investigated. It has been found that Ge crystals are (111) oriented when the Au layer is as thin as 9 nm, whereas crystal grains are randomly oriented when the Au layer is as thick as 34 nm. The difference is discussed in terms of the difference in the position of nucleation sites of Ge crystals.

本文言語English
論文番号SB1029
ジャーナルJapanese Journal of Applied Physics
61
DOI
出版ステータスPublished - 2022 2月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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