Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO2 from a Cu capped Co-C layer

Hiroyasu Ichikawa, Kazuyoshi Ueno

研究成果: Conference contribution

抄録

To improve the crystallinity of multilayer graphene (MLG) directly deposited on SiO2 for interconnect applications, a new solid phase precipitation (SPP) process involving current stress is investigated. It is found that the MLG crystallinity precipitated from a Cu capped Co-C layer can be improved by the vertical current to the Cu/Co-C but not by the horizontal current. The current enhanced SPP (CE-SPP) is expected as a mean to improve the MLG crystallinity directly deposited on SiO2.

本文言語English
ホスト出版物のタイトル2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ244-246
ページ数3
ISBN(電子版)9781509046591
DOI
出版ステータスPublished - 2017 6 13
イベント2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
継続期間: 2017 2 282017 3 2

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period17/2/2817/3/2

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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